公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1998 | Demonstration of GaN MIS diodes by using AlN and Ga 2 O 3 (Gd 2 O 3) as dielectrics | Ren, F; Abernathy, CR; MacKenzie, JD; Gila, BP; Pearton, SJ; Hong, M; Marcus, MA; Schurman, MJ; Baca, AG; Shul, RJ; MINGHWEI HONG | Solid-State Electronics | | | |
1997 | Dielectrics for GaN based MIS-diodes | Ren, F; Abernathy, CR; MacKenzie, JD; Gila, BP; Pearton, SJ; Hong, M; Macos, M; Schurman, MJ; Baca, AG; Shul, RJ; MINGHWEI HONG | MRS Proceedings | 5 | | |
1998 | Effect of temperature on Ga2O3 (Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors | Ren, F; Hong, M; Chu, SNG; Marcus, MA; Schurman, MJ; Baca, A; Pearton, SJ; Abernathy, CR; MINGHWEI HONG | Applied Physics Letters | | | |
1998 | Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors | Abernathy, CR; Baca, A; Chu, SNG; Hong, M; Lothian, JR; Marcus, MA; Pearton, SJ; Ren, F; Schurman, MJ; MINGHWEI HONG | | | | |
1998 | Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors; Applied Physics Letters | Abernathy, CR; Baca, A; Chu, SNG; Hong, M; Lothian, JR; MINGHWEI HONG | | | | |
2000 | GaN electronics for high power, high temperature applications | Pearton, SJ; Ren, F; Zhang, AP; Dang, G; Cao, XA; Cho, H; Abernathy, CR; Han, J; Baca, AG; Monier, C; others; MINGHWEI HONG | Interface-Electrochemical Society | | | |
2000 | in-V MOSFET Using Ga203/Gd203 As The Gate Oxide | Ren, F; Hong, M; Wang, YC; Kwo, J; Mannaerts, JP; Abernathy, CR; Pearton, SJ; MINGHWEI HONG | Topical Workshop on Heterostructure Microelectronics | | | |
1998 | Metal Contact On Nitride Based Materials | Ren, E; Abernathy, CR; Shurman, M; Hong, M; Pearton, SJ; Lothian, JR; MINGHWEI HONG | MRS Proceedings | | | |