公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2009 | Shallow Trench Isolated-Related Narrow Channel Effect on Kink Effect and Breakdown Behavior of 40nm PD SOI NMOS Device | J. I. Lu; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; JAMES-B KUO | EUROSOI | |||
2010 | Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device | H. J. Hung; J. B. kuo; D. Chen; C. T. Tsai; C. S. Yeh; JAMES-B KUO | Solid-State Electronics | 1 | 1 | |
2008 | Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device | I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | IEEE Transactions Electron Devices | 3 | 1 | |
2007 | STI Mechanical Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Devices | I. Lin; V. Su; J. B. kuo; M. Ma; C. T. Tsai; C. S. Yeh; D. Chen; JAMES-B KUO | IEEE International Semicondcutor Device Research Symp (ISDRS) | 3 | 0 | |
2008 | STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device | H. J. Hung; J. I. Lu; J. B. Kuo; G. S. Lin; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | IEDMS | |||
2008 | STI-Induced Mechanical Stress-Related Breakdown Behavior of 40nm PD SOI NMOS Devices | J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | ICSICT | |||
2008 | STI-Induced Mechanical-Stress-Related Kink Effect of 40nm PD SOI NMOS Devices | I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | European SOI Conference | |||
2012 | Turn-off Transient Behavior of 40nm PD SOI NMOS Device Considering the Floating Body Effect | S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO | Eurosoi Conference |