Skip navigation
中文
English
DSpace
CRIS
首頁
單位
研究人員
研究成果檢索
分類瀏覽
單位
研究人員
研究成果檢索
學術出版
幫助
登入
中文
English
NTU Scholars
研究成果檢索
瀏覽 的方式: 作者
C.-C. Lee
或是輸入前幾個字:
跳到:
0-9
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
排序方式:
升冪
降冪
結果/頁面
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
作者/紀錄:
全部
1
5
10
15
20
25
30
35
40
45
50
顯示 7 到 15 筆資料,總共 15 筆
< 上一頁
公開日期
標題
作者
來源出版物
scopus
WOS
全文
1999
Design and Analysis of a 2-D Eigenspace-Based Interference Canceller
C.-C. Lee; Ju-Hong Lee; JU-HONG LEE
IEEE Transactions on Antennas and Propagation
5
2
2017
The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel.
M. H.Liao
; H.-W. Hsuh; C.-C. Lee
Vacuum
2016
Ge1-xSix on Ge-Based N-Type Metal-Oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order StressPiezoresistive Relationships
M. H.Liao
; C.-C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng
Thin Solid Films
2017
The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages
M.-H. Liao; C.-P. Hsieh; C.-C. Lee; MING-HAN LIAO
AIP Advances
2017
The investigation of selfheating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages
M. H.Liao
; C.-P. Hsieh; C.-C. Lee
AIP Advances
2016
The investigation of the diameter dimension effect on the Si nano-tube transistors
M. H.Liao
; C.-H. Yeh; C.-C. Lee; C.-P. Wang
AIP Advances
0
2018
Scan-mode atmospheric-pressure plasma jet processed reduced graphene oxides for quasi-solid-state gel-electrolyte supercapacitors
A. Hsu; H.-H. Chien; C.-Y. Liao; C.-C. Lee; J.-H. Tsai; I-CHUN CHENG
; JIAN-ZHANG CHEN
; Hsu C.-C.
Coatings
20
18
2010
Strain Engineering of Nanoscale Strained Si MOS Devices
B.-F. Hsieh; S. T. Chang; W.-C.Wang; M.-H. Liao; C.-C. Lee; J. Huang; MING-HAN LIAO
Thin Solid Films
2017
The systematic investigation of self-heating effect on CMOS Logic transistors from 20 nm to 5 nm technology nodes by experimental thermo-electric measurements and finite element modeling
M. H.Liao
; C.-P. Hsieh; C.-C. Lee
IEEE Transactions on Electron Devices