公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric | Chen, CP; Lin, TD; Lee, YJ; Chang, YC; MINGHWEI HONG ; Kwo, J | Solid-State Electronics | | | |
2006 | Structural and electrical characteristics of Ga2O3 (Gd2O3)/GaAs under high temperature annealing | Chen, CP; Lee, YJ; Chang, YC; Yang, ZK; MINGHWEI HONG ; Kwo, J; Lee, HY; Lay, TS | Journal of applied physics | | | |
2004 | Structure of Sc 2 O 3 Films Epitaxially Grown on $α$-Al 2 O 3 (111) | Kortan, AR; MINGHWEI HONG ; Kwo, J; Chang, P; Chen, CP; Mannaerts, JP; Liou, SH | MRS Proceedings | | | |
2006 | Structure of Sc2O3 films epitaxially grown on α -Al2O3 (0001) | Kortan, AR; Kopylov, N; Kwo, J; MINGHWEI HONG ; Chen, CP; Mannaerts, JP; Liou, SH | Si-Hwang Liou Publications | | | |
2005 | Thin single-crystal Sc 2 O 3 films epitaxially grown on Si (111)—structure and electrical properties | Chen, CP; MINGHWEI HONG ; Kwo, J; Cheng, HM; Huang, YL; Lin, SY; Chi, J; Lee, HY; Hsieh, YF; Mannaerts, JP | Journal of crystal growth | | | |