公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1991 | In0.53Ga0.47As and in0.52Al0.48As on Inp Grown by Molecular Beam Epitax | Chen, M. K.; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung | The 17th EDMS | | | |
1991 | InAlAs/InGaAs NPN Single Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy | Huang, Chang-Hsiu; Chen, M. K.; 林浩雄 ; Lin, Hao-Hsiung | 17th EDMS | | | |
1991 | Two-Phase Liquid Phase Epitaxy of Growing in0.53Ga0.47As on Inp | Chen, M. K.; 林浩雄 ; Lin, Hao-Hsiung | 17th EDMS | | | |
1993 | Two-Phase Liquid Phase Epitaxy of Growing In0.53Ga0.47As on InP | Chen, M. K.; 林浩雄 ; Lin, Hao-Hsiung | Journal of Vacuum Science & Technology. B | | | |