公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition | Lee, S.W.; Chen, P.S.; Cheng, S.L.; Lee, M.H.; Chang, H.T.; Lee, C.-H.; Liu, C.W. | Applied Surface Science | | | |
2008 | Modified growth of Ge quantum dots using C<inf>2</inf>H<inf>4</inf> mediation by ultra-high vacuum chemical vapor deposition | Lee, S.W.; Chen, P.S.; Cheng, S.L.; Lee, M.H.; Chang, H.T.; Lee, C.-H.; Liu, C.W.; CHEE-WEE LIU | Applied Surface Science | 2 | 1 | |
2003 | MOS Ge/Si quantum dot infrared photodetectors with quantum dot and wetting layer responses | Hsu, B.C.; Chang, S.T.; Kuo, P.S.; Chen, P.S.; Liu, C.W.; Lu, J.H.; CHEE-WEE LIU | Semiconductor Device Research Symposium, 2003 International | 0 | 0 | |
2004 | Novel MIS Ge-Si quantum-dot infrared photodetectors | Hsu, B.-C.; Lin, C.-H.; Kuo, P.-S.; Chang, S.T.; Chen, P.S.; CHEE-WEE LIU ; Lu, J.-H.; CHIEH-HSIUNG KUAN | IEEE Electron Device Letters | 21 | 21 | |
2003 | Optimal SiGe:C HBT module for BiCMOS applications | Lai, L.S.; Liang, C.S.; Chen, P.S.; Hsu, Y.M.; Liu, Y.H.; Tseng, Y.T.; Lu, S.C.; Tsai, M.-J.; Liu, C.W.; Rosenblad, C.; Buschbaum, T.; Buschbeck, M.; Ramm, J.; CHEE-WEE LIU | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | 3 | 0 | |
2006 | Physical and electrical characteristics of metal-oxide-semiconductor capacitor containing germanium nanocrystals | Chiang, K.H.; Lu, S.W.; Peng, Y.H.; Chen, P.S.; Kuan, C.H.; CHIEH-HSIUNG KUAN | Third International SiGe Technology and Device Meeting, ISTDM 2006 | | | |
2004 | Post deposition annealing effects on the reliability of ALD HfO<inf>2</inf> films on strained-Si<inf>0.8</inf>Ge<inf>0.2</inf> layers | Tzeng, P.J.; Maikap, S.; Lai, W.Z.; Liang, C.S.; Chen, P.S.; Lee, L.S.; Liu, C.W.; CHEE-WEE LIU | International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | | | |
2004 | Recessed oxynitride dots on self-assembled Ge quantum dots grown by LPD | Kuo, P.-S.; Hsu, B.-C.; Chen, P.-W.; Chen, P.S.; Liu, C.W.; CHEE-WEE LIU | Electrochemical and Solid-State Letters | 10 | 10 | |
2003 | Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si | Lee, S.W.; Chen, L.J.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; Chien, T.Y.; Chia, C.T.; CHEE-WEE LIU | Applied Physics Letters | 55 | 50 | |
2005 | SiGe/Si PMOSFET using graded channel technique | Lin, Y.M.; Wu, S.L.; Chang, S.J.; Chen, P.S.; Liu, C.W.; CHEE-WEE LIU | Materials Science in Semiconductor Processing | 8 | 6 | |
2005 | Strained CMOS technology with Ge | Chen, P.S.; Lee, M.H.; Lee, S.W.; Liu, C.W.; Tsai, M.-J.; CHEE-WEE LIU | Proceedings of Electrochemical Society | | | |
2004 | The evolution of electroluminescence in Ge quantum-dot diodes with the fold number | Peng, Y.H.; Hsu, C.-H.; CHIEH-HSIUNG KUAN ; CHEE-WEE LIU ; Chen, P.S.; Tsai, M.-J.; Suen, Y.W. | Applied Physics Letters | 18 | 17 | |
2005 | Threading Dislocation Induced Low Frequency Noise in Strained-Si nMOSFETs | Hua, W.-C.; Lee, M.H.; Chen, P.S.; Tsai, M.-J.; Liu, C.W. | IEEE Electron Device Letters | | | |
2005 | Threading dislocation induced low frequency noise in strained-Si nMOSFETs | Hua, W.-C.; Lee, M.H.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 34 | 31 | |
2005 | Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si <inf>1-x-y</inf> Ge <inf>x</inf> C <inf>y</inf> thin films on Si(0 0 1) with ethylene (C <inf>2</inf> H <inf>4</inf> ) precursor as carbon source | Chen, P.S.; Lee, S.W.; Liu, Y.H.; Lee, M.H.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU | Materials Science in Semiconductor Processing | 8 | 12 | |