公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2006 | Physical and electrical characteristics of metal-oxide-semiconductor capacitor containing germanium nanocrystals | CHIEH-HSIUNG KUAN ; Chiang, K.H.; Lu, S.W.; Peng, Y.H.; Chen, P.S.; CHIEH-HSIUNG KUAN | Third International SiGe Technology and Device Meeting, ISTDM 2006 | | | |
2004 | Post deposition annealing effects on the reliability of ALD HfO<inf>2</inf> films on strained-Si<inf>0.8</inf>Ge<inf>0.2</inf> layers | CHEE-WEE LIU ; Tzeng, P.J.; Maikap, S.; Lai, W.Z.; Liang, C.S.; Chen, P.S.; Lee, L.S.; CHEE-WEE LIU | International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | | | |
2004 | Recessed oxynitride dots on self-assembled Ge quantum dots grown by LPD | CHEE-WEE LIU ; Kuo, P.-S.; Hsu, B.-C.; Chen, P.-W.; Chen, P.S.; CHEE-WEE LIU | Electrochemical and Solid-State Letters | | | |
2003 | Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si | CHEE-WEE LIU ; Lee, S.W.; Chen, L.J.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; Chien, T.Y.; Chia, C.T.; CHEE-WEE LIU | Applied Physics Letters | | | |
2005 | SiGe/Si PMOSFET using graded channel technique | CHEE-WEE LIU ; Lin, Y.M.; Wu, S.L.; Chang, S.J.; Chen, P.S.; CHEE-WEE LIU | Materials Science in Semiconductor Processing | | | |
2005 | Strained CMOS technology with Ge | CHEE-WEE LIU ; Chen, P.S.; Lee, M.H.; Lee, S.W.; Liu, C.W.; Tsai, M.-J.; CHEE-WEE LIU | Proceedings of Electrochemical Society | | | |
2004 | The evolution of electroluminescence in Ge quantum-dot diodes with the fold number | Peng, Y.H.; Hsu, C.-H.; CHIEH-HSIUNG KUAN ; CHEE-WEE LIU ; Chen, P.S.; Tsai, M.-J.; Suen, Y.W. | Applied Physics Letters | 18 | 17 | |
2005 | Threading dislocation induced low frequency noise in strained-Si nMOSFETs | CHEE-WEE LIU ; Hua, W.-C.; Lee, M.H.; Chen, P.S.; Tsai, M.-J.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2005 | Threading Dislocation Induced Low Frequency Noise in Strained-Si nMOSFETs | Hua, W.-C.; Lee, M.H.; Chen, P.S.; Tsai, M.-J.; Liu, C.W. | IEEE Electron Device Letters | | | |
2005 | Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si <inf>1-x-y</inf> Ge <inf>x</inf> C <inf>y</inf> thin films on Si(0 0 1) with ethylene (C <inf>2</inf> H <inf>4</inf> ) precursor as carbon source | CHEE-WEE LIU ; Chen, P.S.; Lee, S.W.; Liu, Y.H.; Lee, M.H.; Tsai, M.-J.; CHEE-WEE LIU | Materials Science in Semiconductor Processing | | | |