Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2007 | Depletion-mode GaAs-based MOSFET with Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as a gate dielectric | Tsai, P.J.; Chu, L.K.; Chen, Y.W.; Chiu, Y.N.; Yang, H.P.; Chang, P.; Kwo, J.; Chi, J.; MINGHWEI HONG | Journal of Crystal Growth | | | |
2007 | InGaAs sub-monolayer quantum dots VCSEL with extremely temperature insensitivity for 2.125 Gb/s application | Lai, F.-I.; Kuo, H.C.; Huang, H.W.; Wang, S.C.; Lin, G.R.; Chi, J.; Maleev, N.A.; GONG-RU LIN | Conference on Lasers and Electro-Optics Europe | 0 | 0 | |
2006 | Temperature-dependent optical properties of In0.34 Ga0.66 As1 - x Nx / GaAs single quantum well with high nitrogen content for 1.55 μ m application grown by molecular beam epitaxy | Lai, F.-I.; Kuo, S.Y.; Wang, J.S.; Hsiao, R.S.; Kuo, H.C.; Chi, J.; Wang, S.C.; Wang, H.S.; CHI-TE LIANG ; YANG-FANG CHEN | Journal of Crystal Growth | 14 | 13 | |
2005 | Thin single-crystal Sc<inf>2</inf>O<inf>3</inf> films epitaxially grown on Si (1 1 1) - Structure and electrical properties | Chen, C.P.; MINGHWEI HONG ; Kwo, J.; Cheng, H.M.; Huang, Y.L.; Lin, S.Y.; Chi, J.; Lee, H.Y.; Hsieh, Y.F.; Mannaerts, J.P. | Journal of Crystal Growth | | | |