公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
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2006 | Temperature-dependent optical properties of In0.34 Ga0.66 As1 - x Nx / GaAs single quantum well with high nitrogen content for 1.55 μ m application grown by molecular beam epitaxy | Lai, F.-I.; Kuo, S.Y.; Wang, J.S.; Hsiao, R.S.; Kuo, H.C.; Chi, J.; Wang, S.C.; Wang, H.S.; CHI-TE LIANG ; YANG-FANG CHEN | Journal of Crystal Growth | 14 | 13 | |
2005 | Thin single-crystal Sc<inf>2</inf>O<inf>3</inf> films epitaxially grown on Si (1 1 1) - Structure and electrical properties | Chen, C.P.; MINGHWEI HONG ; Kwo, J.; Cheng, H.M.; Huang, Y.L.; Lin, S.Y.; Chi, J.; Lee, H.Y.; Hsieh, Y.F.; Mannaerts, J.P. | Journal of Crystal Growth |