公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2011 | Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics | Chu, LK; Merckling, C; Alian, A; Dekoster, J; Kwo, J; Hong, M; Caymax, M; Heyns, Marc; MINGHWEI HONG | Applied Physics Letters | | | |
2009 | Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y 2 O 3 on Ge | Chu, LK; Lee, WC; Huang, ML; Chang, YH; Tung, LT; Chang, CC; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2009 | Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3) on Ge (100) | Chu, LK; Lin, TD; Lee, CH; Tung, LT; Lee, WC; Chu, RL; Chang, CC; Hong, Mingyi; Kwo, J; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
2009 | Molecular beam epitaxy-grown Al 2 O 3/HfO 2 high-$κ$ dielectrics for germanium | Lee, WC; Chin, BH; Chu, LK; Lin, TD; Lee, YJ; Tung, LT; Lee, CH; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Crystal Growth | | | |
2010 | Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS | Lee, WC; Chang, P; Lee, YJ; Huang, ML; Lin, TD; Chu, LK; Chang, YC; Chiu, HC; Chang, YH; Lin, CA; others; MINGHWEI HONG | 2010 International Symposium on VLSI Technology Systems and Applications | 0 | 0 | |
2015 | Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high $κ$ gate dielectric using a CMOS compatible process | Fu, CH; Lin, YH; Lee, WC; Lin, TD; Chu, RL; Chu, LK; Chang, P; Chen, MH; Hsueh, WJ; Chen, SH; others; MINGHWEI HONG | Microelectronic Engineering | | | |
2008 | Si metal-oxide-semiconductor devices with high kappa HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition | Pan, CH; Kwo, J; Lee, KY; Lee, WC; Chu, LK; Huang, ML; Lee, YJ; Hong, M; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |