公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2014 | Parasitic BJT versus DIBL: Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device | D. H. Lung; S. K. Hu; J. B. Kuo; D. Chen; JAMES-B KUO | ISIC | 1 | 0 | |
2005 | Power junction FETs (JFETs) for very low-voltage applications | D. Chang; M. Lee; D. Chen; V. Liva; DAN CHEN | IEEE Applied Power Electronics Conference and Exposition | |||
2006 | Practical Simulations of Control Characteristics of a Current-Mode DC/DC Converter | B. Wang; S. Wang; D. Chen; K. Huang; B. Tai; E. Tseng; DAN CHEN | IEEE Power Electronics Specialist Conference | |||
2009 | Shallow Trench Isolated-Related Narrow Channel Effect on Kink Effect and Breakdown Behavior of 40nm PD SOI NMOS Device | J. I. Lu; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; JAMES-B KUO | EUROSOI | |||
2010 | Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device | H. J. Hung; J. B. kuo; D. Chen; C. T. Tsai; C. S. Yeh; JAMES-B KUO | Solid-State Electronics | 1 | 1 | |
2008 | Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device | I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | IEEE Transactions Electron Devices | 3 | 1 | |
2005 | Simulation and Analysis of Conducted EMI for a Commercial DC/DC Power Module | P.-H. Liu; D. Chen; C.-W. Liu; S.-Y. Wang; DAN CHEN | IEEE co-sponsored Taiwan Power Electronics Conference | |||
2008 | Small-signal modeling of DC converters with digital peak-current-mode control | H.-S. Nien; D. Chen; W.-H. Chang; DAN CHEN | IEEE Power Electronics Specialist Conference | |||
2007 | STI Mechanical Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Devices | I. Lin; V. Su; J. B. kuo; M. Ma; C. T. Tsai; C. S. Yeh; D. Chen; JAMES-B KUO | IEEE International Semicondcutor Device Research Symp (ISDRS) | 3 | 0 | |
2008 | STI-Induced Mechanical Stress-Related Breakdown Behavior of 40nm PD SOI NMOS Devices | J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | ICSICT | |||
2008 | STI-Induced Mechanical-Stress-Related Kink Effect of 40nm PD SOI NMOS Devices | I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | European SOI Conference | |||
2012 | Turn-off Transient Behavior of 40nm PD SOI NMOS Device Considering the Floating Body Effect | S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO | Eurosoi Conference | |||
2013 | Turn-off Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect | D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO | International Electron Devices and Material Symposium | |||
2013 | Turn-on Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect | D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO | International Semiconductor Devices Research Symposium | |||
2016 | Using gallium-nitride cascode switching devices for common mode electromagnetic interference reduction in power converters/inverters | J.-Y. Lin; D. Chen; C.-W. Hung; Z. Huang; DAN CHEN | IET Power Electronics | |||
2013 | Using Offset Cancellation Circuit to Mitigate Beat-Frequency Oscillation of Phase Currents in a Multiphase Interleaved Voltage Regulator | C.-H. Chiu; C.-J. Chen; D. Chen; W.-H. Chang; DAN CHEN |