公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2001 | InAsN Grown by Plasma-assisted Gas Source MBE | D. K. Shih,; H. H. Lin,; T. Y. Chu,; T. R. Yang,; HAO-HSIUNG LIN | 2001 MRS Fall meeting, Symposium H | | | |
2001 | On the InAs(N)/InGaAs quantum wells | T. Y. Chu,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN | 2001 Electronics Devices and Materials Symposia | | | |
2001 | Optical properties of as-grown and annealed of InAs(N)/ InGaAsP multiple quantum wells | G. R. Chen,; H. H. Lin,; J. S. Wang,; D. K. Shih,; HAO-HSIUNG LIN | Journal of Applied Physics | 4 | 3 | |
2003 | Optical properties of InAs1-xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy | G. R. Chen,; H. H. Lin,; J. S. Wang,; D. K. Shih,; HAO-HSIUNG LIN | Journal of Electronic Materials | 7 | 7 | |
2005 | Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contents | H. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN | 17th Indium Phosphide and Related Materials | | | |
2005 | Photoluminescence characterization of midinfrared InNxAs1–x/In0.53Ga0.47As/InP multiquantum wells with various N contents | H. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN | Applied Physics Letters | 3 | 15 | |
2002 | Raman scattering characterization of InAsN bulk film on (100) InP substrates | D. K. Shih,; H. H. Lin,; Y. F. Chen,; HAO-HSIUNG LIN | 2002 IEDMS | | | |
2001 | Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBE | D. K. Shih,; H. H. Lin,; Y. H. Lin; HAO-HSIUNG LIN | Middle Infrared Coherent Sources MICS’01 International Workshop | | | |
2002 | Structural properties and Raman modes of InAsN bulk films on (100) InP substrates | D. K. Shih,; H. H. Lin,; Y. F. Chen,; HAO-HSIUNG LIN | OPT’02 | | | |