公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Structural anisotropy of nonpolar and semipolar InN epitaxial layers | Darakchieva, V.; Xie, M.-Y.; Franco, N.; Giuliani, F.; Nunes, B.; Alves, E.; Hsiao, C.L.; Chen, L.C. ; Yamaguchi, T.; Takagi, Y.; Kawashima, K.; Nanishi, Y. | Journal of Applied Physics | 18 | 21 | |
2011 | Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al 2O 3 (0001) by high power impulse magnetron sputtering | Junaid, M.; Lundin, D.; Palisaitis, J.; Hsiao, C.-L.; Darakchieva, V.; Jensen, J.; Persson, P.O.Å.; Sandström, P.; Lai, W.-J.; Chen, L.-C. ; Chen, K.-H.; Helmersson, U.; Hultman, L.; Birch, J. | Journal of Applied Physics | 16 | 16 | |
2011 | Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations | Darakchieva, V.; Lorenz, K.; Xie, M.-Y.; Alves, E.; Hsiao, C.L.; Chen, L.C. ; Tu, L.W.; Schaff, W.J.; Yamaguchi, T.; Nanishi, Y. | Journal of Applied Physics | 3 | 3 | |
2008 | Unravelling the free electron behavior in InN | Darakchieva, V.; Hofmann, T.; Schubert, M.; Sernelius, B.E.; Giuliani, F.; Xie, M.-Y.; Persson, P.O.Å.; Monemar, B.; Schaff, W.J.; Hsiao, C.-L.; Chen, L.-C. ; Nanishi, Y. | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD | 0 | 0 | |