公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2016 | Modeling and simulation of negative capacitance gate on Ge FETs | Liao, Y.-H.; Fan, S.-T.; CHEE-WEE LIU | ECS Transactions | |||
2017 | Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs | Lee, M.H.; Fan, S.-T.; Tang, C.-H.; Chen, P.-G.; Chou, Y.-C.; Chen, H.-H.; Kuo, J.-Y.; Xie, M.-J.; Liu, S.-N.; Liao, M.-H. ; Jong, C.-A.; Li, K.-S.; Chen, M.-C.; Liu, C.W. | International Electron Devices Meeting | 91 | 0 | |
2020 | Strain effect on the stability in ferroelectric HfO2 simulated by first-principles calculations | Fan, S.-T.; Chen, Y.-W.; Liu, C.W.; CHEE-WEE LIU | Journal of Physics D: Applied Physics | 22 | 24 | |
2016 | The hysteresis-free negative capacitance field effect transistors using non-linear poly capacitance | Fan, S.-T.; Yan, J.-Y.; Lai, D.-C.; CHEE-WEE LIU | Solid-State Electronics |