公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1997 | Raman scattering as a characterization tool for epitaxial GaN thin films grown on sapphire by turbo disk metalorganic chemical vapor deposition | Feng, Z.C.; Schurman, M.; Stall, R.A.; Pavloski &, M.; Whitley, A. | Appl. Optics | | | |
1988 | Raman scattering characterization of high-quality Cd1-xMnxTe films grown by metalorganic chemical vapor deposition | Feng, Z.C.; Sudharsanan, R.; Perkowitz, S.; Erbil, A.; Pollard, K.T.; Rohatgi, A. | J. Appl. Phys | | | |
1992 | Raman scattering of InxGa1-xAs/InP grown by Uniform Radial Flow Epitaxy | Feng, Z.C.; Allerman, A.A.; Barnes &, P.A.; Perkowitz, S. | Appl. Phys. Lett | | | |
1988 | Raman scattering studies for chemical vapor deposited 3C-SiC films on (100) Si | Feng, Z.C.; Mascarenhas, A.; Choyke &, W.J.; Powell, J.A. | J. Appl. Phys | | | |
1991 | Raman scattering studies of Cd1-xMnxTe films on GaAs by pulsed laser evaporation and epitaxy | Feng, Z.C.; Perkowitz, S.; Dubowski, J.J. | J. Appl. Phys | | | |
1993 | Raman spectroscopic characterization of human breast issue: implications for breast malignancy monitoring | Redd, D.; Feng, Z.C.; Yue, K.T.; Gansler, T. | Applied Spectroscopy | | | |
1994 | Raman, infrared, photoluminescence and theoretical studies of the II-VI-VI ternary CdSeTe | Feng, Z.C.; Becla, P.; Kim, L.S.; Perkowitz, S.; Feng, Y.P.; Poon, H.C.; Williams, K.P.; Pitt, G.D. | J. Crystal Growth | | | |
2005 | Recombination mechanism of InGaN multiple quantum wells grown by metalorganic chemical vapor deposition | CHIH-CHUNG YANG ; Feng, Z.C.; Liu, W.; Chua, S.J.; Chen, J.H.; Yang, C.C.; Lu, W.; Collins, W.E.; CHIH-CHUNG YANG | Physica Status Solidi C: Conferences | | | |
1990 | Resonance Raman scattering from epitaxial InSb thin films | Feng, Z.C.; Perkowitz, S.; Rao, T.S.; Webb, J.B. | J. Appl. Phys | | | |
1994 | Self-defocusing of nanosecond laser pulses in ZnTe | Ji, W.; Kukaswadia, A.K.; Feng, Z.C.; Tang, S.H. | J. Appl. Phys | | | |
1992 | A simple, versatile, liquid nitrogen cryostat for Raman studies | Yue, K.T.; Feng, Z.C.; Perkowitz, S.; Puckett, B. | Applied Spectroscopy | | | |
2018 | Spectroscopic phonon and extended x-ray absorption fine structure measurements on 3C-SiC/Si (001) epifilms | Talwar, D.N.; Wan, L.; Tin, C.-C.; Feng, Z.C.; HAO-HSIUNG LIN | Applied Surface Science | 6 | 5 | |
2008 | Structural and optical properties of ingan/gan multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition | Feng, Z.C.; Yang, J.-R.; Li, A.G.; Ferguson, I.T.; JER-REN YANG | III- Nitride Devices and Nanoengineering | | | |
2011 | Structural and optical properties of InGaN/GaN multiple quantum well light emitting diodes grown on (1122) facet GaN/sapphire templates by metalorganic chemical vapor deposition | Huang, J.-L.; Wang, L.S.; Lai, Y.-S.; Lee, Y.-C.; Qiu, Z.R.; Liu, S.; Wuu, D.-S.; Feng, Z.C.; JIUN-LANG HUANG | Proceedings of SPIE - The International Society for Optical Engineering | | | |
2008 | Structural and Optical Studies on Ion-implanted 6H–SiC Thin Films | Feng, Z.C.; Lien, S.C.; Zhao, J.H.; Sun, X.W.; Lu, W. | Thin Solid Films | | | |
1988 | Structural defect related donor-bound exciton spectra in MBE (001) CdTe films | Feng, Z.C.; Burke, M.G.; Choyke, W.J. | Appl. Phys. Lett | | | |
1996 | Structural, optical and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition | Feng, Z.C.; Rohatgi, A.; Tin, C.C.; Hu, R.; Wee &, A.T.S.; Se, K.P. | J. Electronic Materials | | | |
1982 | Studies of native oxides of GaAs | Liu, H.D.; Chen, W.X.; Feng, Z.C. | Chinese J. of Semicond | | | |
2006 | Study of carrier localization in InGaN/GaN quantum well blue-light-emitting diode structures | Chen, J.H.; Feng, Z.C.; Wang, J.C.; Tsai, H.L.; Yang, J.R.; Parekh, A.; Armour, E.; JER-REN YANG | Journal of Crystal Growth | 17 | 15 | |
2013 | Study of MgxZn1-xO alloys (0<x<0.15) by x-ray absorption spectroscopy | Zheng, W.; Feng, Z.C.; Fan-Hsiu, C.; Lee, J.-F.; Zheng, R.S.; Wuu, D.-S.; CHEE-WEE LIU | Advanced Materials Research | 6 | 0 | |