公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2007 | Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells | H. P. Hsu,; P. Sitarek,; Y. S. Huang,; P. W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN | physica status solidi (a) | 2 | 2 | |
2014 | Photoluminescence and Raman scattering of degenerate InN | F. W. Pranoto,; C. Y. Tsai,; Y. C. Liao,; L. C. Chen,; K. H. Chen,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN | OPTIC 2014, optics and photonics Taiwan, international conference 2014 | | | |
2013 | Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure | J. Y. Chen,; B. H. Chen,; Y. S. Huang,; Y. C. Chin,; H. S. Tsai,; H. H. Lin,; HAO-HSIUNG LIN | Journal of Luminescence | 5 | 5 | |
2005 | Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contents | H. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN | 17th Indium Phosphide and Related Materials | | | |
2005 | Photoluminescence characterization of midinfrared InNxAs1–x/In0.53Ga0.47As/InP multiquantum wells with various N contents | H. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN | Applied Physics Letters | 3 | 15 | |
2009 | Photoluminescence of InAsSb/InAsPSb quantum well | C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN | 2009 International electron devices and materials symposia | | | |
2008 | Photoluminescence study of InAsPSb epilayers grown on GaAs substrates | Y. C. Chou,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN | 2008 International electron devices and materials symposia | | | |
2006 | Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxy | T. Y. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN | International electron devices and materials symposia | | | |
2007 | Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy | G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN | OPT2007 | | | |
2007 | Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally | C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN | OPT2007 | | | |
2007 | Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy | G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN | 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8) | | | |
2005 | Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy | P. W. Liu,; G. Tsai,; H. H. Lin,; T. Krier,; HAO-HSIUNG LIN | OPT2005 | | | |
2009 | Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy, | H. P. Hsu,; Y. N. Huang,; Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; K. K. Tiong,; P. Sitarek,; J. Misiewicz,; HAO-HSIUNG LIN | Physica Status Solidi (A) Applications and Materials Science | 0 | 0 | |
2014 | Polarized Raman spectroscopy of 3C-SiC film grown on 4H-SiC substrate | C. Y. Tsai,; B. Xin,; Z. C. Feng,; Y. M. Zhang,; R. X. Jia,; H. H. Lin,; HAO-HSIUNG LIN | OPTIC 2014, optics and photonics Taiwan, international conference 2014 | | | |
2011 | Preparation and characterization of p-type Fe2O3 pellets from Mg doping in pure oxygen atmosphere at high temperatures | Y. W. Tai,; C. C. Yang,; M. H. Yang,; C. S. Hong,; H. H. Lin,; B. Z. Wan,; HAO-HSIUNG LIN | Journal of the Taiwan Institute of Chemical Engineers | 7 | 6 | |
2013 | Properties of Variable Al Content of AlGaN Layers Grown by MOCVD | C. X. Wang,; F. D. Li,; S. C. Wang,; M. Zhu,; X. Zhang,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN | OPTIC 2013, optics and photonics Taiwan, international conference 2013 | | | |
2002 | Raman scattering characterization of InAsN bulk film on (100) InP substrates | D. K. Shih,; H. H. Lin,; Y. F. Chen,; HAO-HSIUNG LIN | 2002 IEDMS | | | |
2010 | Raman scattering in InAsPSb quaternary alloys | J. S. Tzeng,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN | MBE Taiwan 2010 | | | |
2010 | Raman scattering of heavily Si-doped InAs grown by moleculr beam epitaxy | J. S. Tzeng,; C. J. Wu,; C. J. Hong-Liao,; H. H. Lin,; HAO-HSIUNG LIN | 2010 international electron devices and materials symposia | | | |
2013 | Raman spectroscopy of GaAsPSb alloys | C. Y. Tsai,; Y. C. Chin,; H. H. Lin,; HAO-HSIUNG LIN | IEDMS 2013, international electron devices and materials symposium | | | |