公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2004 | Temperature analysis and characteristics of GaAsSb/GaAs type-II quantum wells lasers | G. H. Liao,; C. L. Tsai,; P. W. Liu,; J. Lin,; H. H. Lin,; HAO-HSIUNG LIN | 2004 IEDMS | | | |
2003 | Temperature dependence of photoreflectance in InAs/GaAs quantum dots | C. M. Lai,; F. Y. Chang,; C. W. Chang,; C. H. Kao,; H. H. Lin,; G. J. Jan,; J. Lee,; HAO-HSIUNG LIN | Applied Physics Letters | 18 | 18 | |
2007 | Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates | T. C. Ma,; T. Y. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN | MBE Taiwan 2007 | | | |
2010 | Temperature dependent photoluminescence of InAsSb/InAsPSb multiple quantum well | C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN | 10th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-X) | | | |
2011 | Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction | F. Cheng,; T. Fa,; S. Yao,; C. J. Wu,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN | Journal of Physics D: Applied Physics | 3 | 3 | |
2010 | The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy | J. M. Lin,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN | 22nd International Conference on Indium Phosphide and Related Materials (IPRM) | 0 | 0 | |
2005 | The photoluminescence spectrum study of different source growth GaAsSb/GaAs type II quantum well | G. L. Wang,; Y. S. Huang,; H. H. Lin,; C. H. Chan,; HAO-HSIUNG LIN | OPT 2005 | | | |
2009 | Thermal quenching of the photoluminescence of InAsSb/InAsPSb multiple quantum wells | C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN | OPT2009 | | | |
2001 | Transport and optical studies of the D- -conduction band in doped GaAs/AlGaAs quantum wells | C. H. Lee,; Y. H. Chang,; C. F. Huang,; M. Y. Huang,; H. H. Lin,; C. P. Lee,; HAO-HSIUNG LIN | Chinese Journal of Physics | 4 | 4 | |
2013 | Twinning in GaAsSb grown on (111)B GaAs by molecular beam epitaxy | Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN | Journal of Physics D: Applied Physics | 9 | 9 | |
2002 | V-III ratio effect on Cubic GaN grown by RF plasma Assisted gas source MBE | L. W. Sung,; H. H. Lin,; C. T. Chia,; HAO-HSIUNG LIN | 2001 MRS Fall Meeting | 0 | 0 | |
2011 | X-ray absorption find structures of InPSb alloys | C. J. Wu,; K. T. Chen,; Z. C. Feng,; W. M. Chang,; C. C. Yang,; H. H. Lin,; HAO-HSIUNG LIN | International photonics conference 2011 (IPC2011) | | | |
2010 | X-ray absorption fine-structure spectroscopy of InAsPSb grown by gas-source molecular-beam epitaxy | C. J. Wu,; Y. R. Lan,; L. Y. Chang,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN | 2010 Micro-optics conference (MOC'10) | | | |
2014 | X-ray absorption near edge structure of silicon in indium arsenide | M. C. Liu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN | OPTIC 2014, optics and photonics Taiwan, international conference 2014 | | | |