公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2009 | A comparative study of GaAsSbN epilayers grown by gas-source molecular-beam epitaxy with different plasma nitrogen species | Y. T. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN | 2009 International electron devices and materials symposia | |||
2003 | A study of optical properties of InGaAs/GaAs quantum dots | C. M. Lai; F. Y. Chang; H. H. Lin; an G. J. Jan; HAO-HSIUNG LIN | Journal of the Korean Physical Society | |||
2012 | A study on the p-InGaP layer of InGaP/InGaAs/Ge triple-junction solar cells | H. M. Wu; S. J. Tsai; H. I. Ho; H. H. Lin; Y. J. Yang; HAO-HSIUNG LIN | International electron devices and materials symposium | |||
2006 | A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy | J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN | OPT2006 | |||
2001 | (AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications | S. C. Yang; H. C. Chiu; Y.-J. Chan; H. H. Lin; J.-M. Kuo; HAO-HSIUNG LIN | IEEE Transactions on Electron Devicess | |||
2009 | Ambient light sensor utilizing combination of filter layer and absorption layer to achieve similar sensitivity to the light as the human eye | H. H. Lin; T. C. Ma; Y. R. Lin; J. P. Wang; C. H. Huang; HAO-HSIUNG LIN | ||||
2008 | Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction | C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN | International conference on optics and photonics in Taiwan (OPT’08) | |||
2009 | Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures | C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN | Applied Physics Letters | 9 | 7 | |
2008 | Band alignment of InAsSb/InAsPSb quantum well | C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN | MBE Taiwan 2008 | |||
2008 | Band alignment of InAsSb/InAsPSb quantum wells | C. J. Wu; H. H. Lin; HAO-HSIUNG LIN | 9th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-9) | |||
2014 | Band discontinuity in InAsPSb alloy system | C. Y. Tsai; W. C. Chen; P. H. Chang; C. I. Wu; H. H. Lin; HAO-HSIUNG LIN | MIOMD 2014 infrared optoelectronics: materials and devices | |||
2008 | Band structure of dilute nitride GaAsSbN | Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN | 2008 International electron devices and materials symposia | |||
2014 | Bond distortion in GaPSb alloys studied by reciprocal space mapping and extended X-ray absorption fine structure | C. Y. Tsai; M. C. Liu; Y. C. Chin; Z. C. Feng; H. H. Lin; HAO-HSIUNG LIN | 21th Symposium on nano device technology | |||
2012 | Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs | C. J. Wu; Z. C. Feng; W. M. Chang; C. C. Yang; H. H. Lin; HAO-HSIUNG LIN ; CHIH-CHUNG YANG | Applied Physics Letters | 8 | 8 | |
2007 | Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10 | I. C. Chen; G. Tsai; H. H. Lin; HAO-HSIUNG LIN | International electron devices and materials symposia | |||
2009 | Characterization of a nitrogen radio-frequency plasma source for growing dilute nitride GaAsSbN | T. C. Ma; H. H. Lin; HAO-HSIUNG LIN | MBE Taiwan 2009 | |||
2006 | Coherent acoustic phonon oscillation in (111) InGaAs/GaAs MQWs with piezoelectric fields | Y. C. Wen; L. C. Chou; H. H. Lin; K. H. Lin; C. Y. Chen; C. K. Sun; HAO-HSIUNG LIN | OPT2006 | |||
2011 | Combination of thermodynamic model and precursor state for As and Sb incorporation behavior in GaAsSb/GaAs multiple-quantum wells | J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 5 | 5 | |
2009 | Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN | Y. T. Lin; T. C. Ma; S. P. Wang; H. H. Lin; HAO-HSIUNG LIN | MBE Taiwan 2009 | |||
2009 | Comparison of InGaPSb/GaAs and InGaP/GaAs HBTs grown by MOCVD | Y. C. Chin; H. H. Lin; C. H. Huang; M. N. Tseng; HAO-HSIUNG LIN | 2009 International electron devices and materials symposia |