公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2006 | Cubic HfO2 Doped with Y2O3 for Advanced Gate Dielectrics by MBE. | Yang, ZhiKai; Lee, WC; Chang, Pen; Huang, MoLin; Huang, Yi Lin; Hong, Minghwei; Huang, CM; Hsu, CH; Kwo, Raynien; MINGHWEI HONG | APS Meeting Abstracts | | | |
2003 | Direct Determination of the Stacking Order in Gd̃ 2Õ 3 Epi-Layers on GaAs | Yacoby, Yizhak; Sowwan, Mukhles; Pindak, Ron; Cross, Julie; Walko, Don; Stern, Ed; Pitney, John; MacHarrie, Robert; Hong, Minghwei; Clarke, Roy; MINGHWEI HONG | Materials Research Society | | | |
2007 | Effect of Al incorporation in the thermal stability of atomic-layer-deposited HfO2 for gate dielectric applications | Chiou, Yan-Kai; Chang, Che-Hao; Wang, Chen-Chan; Lee, Kun-Yu; Wu, Tai-Bor; Kwo, Raynien; Hong, Minghwei; MINGHWEI HONG | Journal of the Electrochemical Society | | | |
1995 | Enhancement in excitonic absorption for GaAs/AlGaAs multiple-quantum-well structures under external anisotropic strain | Huang, Man-Fang; Garmire, Elsa; Partovi, Afshin; Hong, Minghwei; MINGHWEI HONG | Conference on Lasers and Electro-Optics | | | |
1995 | Erratum:‘‘Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structure under external anisotropic strain’’[Appl. Phys. Lett. 66, 736 (1995)] | Huang, Man-fang; Garmire, Elsa; Partovi, Afshin; Hong, Minghwei; MINGHWEI HONG | Applied Physics Letters | | | |
1998 | Ga2O3 (Gd2O3) as a dielectric insulator for GaAs device applications | Lay, Tsong S; Hong, Minghwei; Mannaerts, JP; Liu, CT; Kwo, Jueinai R; Ren, Fan; Marcus, MA; Ng, KK; Chen, Young-Kai; Chou, Li-Jen; others; MINGHWEI HONG | Asia Pacific Symposium on Optoelectronics' 98 | | | |
1998 | GaAs MOSFETs using Ga 2 O 3 (Gd 2 O 3) as gate dielectric | Hong, Minghwei; MINGHWEI HONG | 1998 5th International Conference on Solid-State and Integrated Circuit Technology | | | |
1999 | Gallium-gadolinium oxide gate oxide etch stop layer | Cho, Alfred Yi; Hong, Minghwei; Lothian, James Robert; Mannaerts, Joseph Petrus; Ren, Fan; MINGHWEI HONG | | | | |
2006 | GENNADI BERSUKER, BRENDAN FORAN, AND | LYSAGHT, PAT; HONG, MINGHWEI; KWO, J RAYNIEN; MINGHWEI HONG | Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices | | | |
2006 | GENNADI BERSUKER, BRENDAN FORAN, AND PAT LYSAGHT | HONG, MINGHWEI; KWO, J RAYNIEN; MINGHWEI HONG | Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices | | | |
2002 | High $κ$ Gate Dielectrics For Si And Compound Semiconductors By Molecular Beam Epitaxy | Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | MRS Proceedings | | | |
2002 | High dielectric constant gate oxides for silicon-based devices | Hong, Minghwei; Kortan, Ahmet Refik; Kwo, Jueinai Raynien; Mannaerts, Joseph Petrus; MINGHWEI HONG | | | | |
2010 | High Dielectrics on High Carrier Mobility InGaAs Compound Semiconductors and GaN-Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning | Hong, Minghwei; MINGHWEI HONG | | | | |
2003 | High k Gate Dielectrics For Si And Compound Semiconductors By Molecular Beam Epitaxy | Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | Crystalline oxide-silicon heterostructures and oxide optoelectronics | | | |
2011 | High kappa Dielectrics on InGaAs and GaN-Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning | Hong, Minghwei; MINGHWEI HONG | | | | |
2006 | III-V Compound Semiconductor MOSFET | Hong, Minghwei; Kwo, J Raynien; MINGHWEI HONG | Meeting Abstracts | | | |
2014 | III-V compound semiconductor transistors—from planar to nanowire structures | Riel, Heike; Wernersson, Lars-Erik; Hong, Minghwei; del Alamo, Jes{\\'u; MINGHWEI HONG | MRS Bulletin | | | |
2006 | III-V MOSFET's with Advanced High k Dielectrics | Hong, Minghwei; Kwo, J Raynien; Chen, CP; Chang, YC; Huang, ML; Lin, CF; MINGHWEI HONG | ECS Transactions | | | |
2007 | III? V Metal? Oxide? Semiconductor Field-Effect Transistors with High? Dielectrics | Hong, Minghwei; Kwo, J Raynien; Tsai, Pei-chun; Chang, Yaochung; Huang, Mao-Lin; Chen, Chih-ping; others; MINGHWEI HONG | Japanese journal of applied physics | | | |
1995 | In-situ Ga 2 O 3 process for GaAs inversion/accumulation device and surface passivation applications | Passlack, Matthias; Hong, Minghwei; Mannaerts, Joseph P; Chu, SNG; Opila, Robert L; Moriya, Netzer; MINGHWEI HONG | International Electron Devices Meeting 1995 | | | |