Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
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2011 | The growth of an epitaxial ZnO film on Si (111) with a Gd2O3 (Ga2O3) buffer layer | Lin, BH; Liu, WR; Yang, S; Kuo, CC; Hsu, C-H; Hsieh, WF; Lee, WC; Lee, YJ; MINGHWEI HONG ; Kwo, J | Crystal Growth & Design | |||
2012 | The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a $γ$-Al 2 O 3 buffer layer | Liu, W-R; Lin, BH; Yang, S; Kuo, CC; Li, Y-H; Hsu, C-H; Hsieh, WF; Lee, WC; MINGHWEI HONG ; Kwo, J | CrystEngComm | |||
2012 | Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111) | Liu, W-R; Lin, BH; Kuo, CC; Lee, WC; MINGHWEI HONG ; Kwo, J; Hsu, C-H; Hsieh, WF | CrystEngComm | |||
2013 | Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y 2 O 3-buffered Si (111) | Kuo, CC; Liu, W-R; Lin, BH; Hsieh, WF; Hsu, C-H; Lee, WC; MINGHWEI HONG ; Kwo, J | Optics express |