公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2011 | Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics | Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG | Applied Physics Express | |||
2012 | Surface-atom core-level shift in GaAs (111) A-2$\\times$ 2 | Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; K. Wertheim, Gunther; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG | Journal of the Physical Society of Japan |