公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2020 | Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors | Liu H.-H; Huang Y.-S; Lu F.-L; Ye H.-Y; Liu C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 3 | 2 | |
2003 | Effect of the temperature of polyurethane dissolution on the mechanism of wet-casting membrane formation | Cheng L.-P; Huang Y.-S; Tai-Horng Young | European Polymer Journal | 13 | 12 | |
2020 | Erratum: Cracking failure of curved hollow tree trunks (Royal Society Open Science (2020) 7 (200203) DOI: 10.1098/rsos.200203) | Huang Y.-S; Chiang P.-L; Kao Y.-C; Hsu F.-L; Juang J.-Y.; JIA-YANG JUANG | Royal Society Open Science | | | |
2020 | First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoned Channels | Huang Y.-S; Lu F.-L; Tu C.-T; Chen J.-Y; Tsai C.-E; Ye H.-Y; Liu Y.-C; Liu C.; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 4 | 0 | |
2020 | First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping | Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 3 | 0 | |
2019 | First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise | Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; Liu C.W.; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 6 | 0 | |
2018 | First vertically stacked GeSn nanowire pGAAFETs with Ion = 1850μA/μm (VOV = VDS = -1V) on Si by GeSn/Ge CVD epitaxial growth and optimum selective etching | Huang Y.-S; Lu F.-L; Tsou Y.-J; Tsai C.-E; Lin C.-Y; Huang C.-H; Liu C.W.; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 9 | 0 | |
2019 | First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μa at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V | Tu C.-T; Huang Y.-S; Lu F.-L; Liu H.-H; Lin C.-Y; Liu Y.-C; Liu C.W.; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 9 | 0 | |
2017 | Interface Trap Density Reduction Due to AlGeO Interfacial Layer Formation by Al Capping on Al2O3/GeOx/Ge Stack | Huang C.-H; Huang Y.-S; Chang D.-Z; Lin T.-Y; Liu C.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 4 | 4 | |
2020 | Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced I on (1.7X at V OV = V DS = 0.5 V) by Ge0.85Si0.15 channels | Liu Y.-C; Huang Y.-S; Lu F.-L; Ye H.-Y; Tu C.-T; Liu C.W.; CHEE-WEE LIU | Semiconductor Science and Technology | 1 | 1 | |
2021 | Shallow gas hydrates off southwest Taiwan and their mechanisms | Huang Y.-S; Hsu S.-K; CHIH-CHIEH SU ; Lin A.T.-S; Yu P.-S; Babonneau N; Ratzov G; Lallemand S; Huang P.-C; Lin S.-S; Lin J.-Y; Wei K.-Y; Chang Y.-P; Yu N.-T; Tsai C.-H. | Marine Geophysical Research | 4 | 4 | |
2022 | SSR individual identification system construction and population genetics analysis for Chamaecyparis formosensis | Huang C.-J; FANG-HUA CHU ; Huang Y.-S; Tu Y.-C; Hung Y.-M; Tseng Y.-H; Pu C.-E; Hsu C.T; Chao C.-H; Chou Y.-S; Liu S.-C; You Y.T; Hsu S.-Y; Hsieh H.-C; Wang C.-T; Chen C.-T. | Scientific Reports | 8 | 6 | |
2016 | Strained Ge0.91Sn0.09Quantum Well p-MOSFETs | Huang Y.-S; Huang C.-H; Huang C.-H; Lu F.-L; Chang D.-Z; Lin C.-Y; Wong I.-H; Jan S.-R; Lan H.-S; CHEE-WEE LIU ; Huang Y.-C; Chung H; Chang C.-P; Chu S.S; Kuppurao S. | 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 | 0 | 0 | |
2021 | Uniform 4-Stacked Ge0.9Sn0.1Nanosheets Using Double Ge0.95Sn0.05Caps by Highly Selective Isotropic Dry Etch | Tu C.-T; Huang Y.-S; Cheng C.-Y; Tsai C.-E; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 4 | 5 | |
2018 | Vertically stacked strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process | Huang Y.-S; Lu F.-L; Tsou Y.-J; Ye H.-Y; Lin S.-Y; Huang W.-H; Liu C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 26 | 23 | |