公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2021 | Shallow gas hydrates off southwest Taiwan and their mechanisms | Huang Y.-S; Hsu S.-K; CHIH-CHIEH SU ; Lin A.T.-S; Yu P.-S; Babonneau N; Ratzov G; Lallemand S; Huang P.-C; Lin S.-S; Lin J.-Y; Wei K.-Y; Chang Y.-P; Yu N.-T; Tsai C.-H. | Marine Geophysical Research | 4 | 4 | |
2022 | SSR individual identification system construction and population genetics analysis for Chamaecyparis formosensis | Huang C.-J; FANG-HUA CHU ; Huang Y.-S; Tu Y.-C; Hung Y.-M; Tseng Y.-H; Pu C.-E; Hsu C.T; Chao C.-H; Chou Y.-S; Liu S.-C; You Y.T; Hsu S.-Y; Hsieh H.-C; Wang C.-T; Chen C.-T. | Scientific Reports | 8 | 6 | |
2016 | Strained Ge0.91Sn0.09Quantum Well p-MOSFETs | Huang Y.-S; Huang C.-H; Huang C.-H; Lu F.-L; Chang D.-Z; Lin C.-Y; Wong I.-H; Jan S.-R; Lan H.-S; CHEE-WEE LIU ; Huang Y.-C; Chung H; Chang C.-P; Chu S.S; Kuppurao S. | 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 | 0 | 0 | |
2021 | Uniform 4-Stacked Ge0.9Sn0.1Nanosheets Using Double Ge0.95Sn0.05Caps by Highly Selective Isotropic Dry Etch | Tu C.-T; Huang Y.-S; Cheng C.-Y; Tsai C.-E; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 4 | 5 | |
2018 | Vertically stacked strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process | Huang Y.-S; Lu F.-L; Tsou Y.-J; Ye H.-Y; Lin S.-Y; Huang W.-H; Liu C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 26 | 23 |