公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2002 | Ultralow leakage characteristics of ultrathin gate oxides (∼3 nm) prepared by anodization followed by high-temperature annealing | Ting, C.-C.; Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 25 | 23 | |
2008 | Ultrathin gate oxides prepared by tensile-stress oxidation in tilted cathode anodization system | Wang, C.-C.; Li, T.-H.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 3 | 2 |