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瀏覽 的方式: 作者
J. B. Kuo
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顯示 86 到 103 筆資料,總共 103 筆
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作者
來源出版物
scopus
WOS
全文
2014
Parasitic BJT versus DIBL: Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device
D. H. Lung; S. K. Hu; J. B. Kuo; D. Chen; JAMES-B KUO
ISIC
1
0
2004
PD SOI-Technology SPICE Models
J. B. Kuo; S. C. Lin; JAMES-B KUO
Wiley's Texbook by J. B. Kuo: SOI CMOS VLSI Devices
0
0
2014
Power consumption optimization methodology (PCOM) for low-power/ low-voltage 32-bit microprocessor circuit design via MTCMOS
C. B. Hsu; J. B. Kuo; JAMES-B KUO
MWSCAS
1
0
2009
Shallow Trench Isolated-Related Narrow Channel Effect on Kink Effect and Breakdown Behavior of 40nm PD SOI NMOS Device
J. I. Lu; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; JAMES-B KUO
EUROSOI
2010
Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device
H. J. Hung; J. B. kuo; D. Chen; C. T. Tsai; C. S. Yeh; JAMES-B KUO
Solid-State Electronics
1
1
2008
Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device
I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
IEEE Transactions Electron Devices
3
1
2007
STI Mechanical Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Devices
I. Lin; V. Su; J. B. kuo; M. Ma; C. T. Tsai; C. S. Yeh; D. Chen; JAMES-B KUO
IEEE International Semicondcutor Device Research Symp (ISDRS)
3
0
2008
STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device
H. J. Hung; J. I. Lu; J. B. Kuo; G. S. Lin; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
IEDMS
2008
STI-Induced Mechanical Stress-Related Breakdown Behavior of 40nm PD SOI NMOS Devices
J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
ICSICT
2008
STI-Induced Mechanical-Stress-Related Kink Effect of 40nm PD SOI NMOS Devices
I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
European SOI Conference
2014
Subthreshold Behavior of the SOI NMOS Device Consdiering BJT and DIBL Effects
D. H. Lung; J. B. Kuo; JAMES-B KUO
EUROSOI
2002
The Fringing Electric Field Effect on the Short-Channel Effect Threshold Voltage of FD SOI NMOS Devices with LDD/Sidewall Oxide Spacer Structure
J. B. Kuo; S. C. Lin; JAMES-B KUO
Hong Kong Electron Devices Meeting
2
0
2008
Transient Behavior of 40nm PD SOI NMOS Device Considering STI-Induced Mechanical Stress Effects
J. S. Su; J. B. Kuo; JAMES-B KUO
IEDMS
2007
Triple Threshold Static Power Minimization in High-Level Synthesis of VLSI CMOS
H. Chen; J. B. Kuo; M. Syrzycki; JAMES-B KUO
Power and Timing Modeling and Optimization Conf (PATMOS)
2007
Triple-Threshold Static Power Minimization Technique in High-Level Synthesis for Designing High-Speed Low-Power SOC Applications Using 90nm MTCMOS Technology
H. I. Chen; E. K. Loo; J. B. Kuo; M. J. Syrzycki; JAMES-B KUO
Canadian Conference on Electrical and Computer Engineering
7
0
2012
Turn-off Transient Behavior of 40nm PD SOI NMOS Device Considering the Floating Body Effect
S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
Eurosoi Conference
2013
Turn-off Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect
D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO
International Electron Devices and Material Symposium
2013
Turn-on Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect
D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO
International Semiconductor Devices Research Symposium