公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2011 | Influence of defects and interface on radiative transition of Ge | Jan, S.-R.; Chen, C.-Y.; Lee, C.-H.; Chan, S.-T.; Peng, K.-L.; Liu, C.W.; Yamamoto, Y.; Tillack, B.; CHEE-WEE LIU | Applied Physics Letters | 17 | 18 | |
2004 | Mechanically strained Si-SiGe HBTs | Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 15 | 12 | |
2004 | Mechanically strained Si/SiGe HBTs | Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; Liu, C.W. | IEEE Electron Device Letters | | | |
2004 | Mechanically strained strained-Si NMOSFETs | Maikap, S.; Yu, C.-Y.; Jan, S.-R.; Lee, M.H.; Liu, C.W. | IEEE Electron Device Letters | | | |
2004 | Mechanically Strained Strained-Si NMOSFETs | Maikap, S.; Yu, C.-Y.; Jan, S.-R.; Lee, M.H.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 24 | 21 | |
2013 | Modeling and optimization of edge dislocation stressors | Tsai, M.-H.; Jan, S.-R.; Yeh, C.-Y.; Liu, C.W.; Goldstein, R.V.; Gorodtsov, V.A.; Shushpannikov, P.S.; CHEE-WEE LIU | IEEE Electron Device Letters | 3 | 3 | |
2016 | Modeling and simulation of TSV induced keep-out zone using silicon data | Liu, C.W.; Yan, J.-Y.; Jan, S.-R.; CHEE-WEE LIU | 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings | 0 | 0 | |
2015 | Reply to 'comment on 'A compact analytic model of the strain field induced by through ilicon vias'' | Jan, S.-R.; Chou, T.-P.; Yeh, C.-Y.; Liu, C.W.; Goldstein, R.V.; Gorodtsov, V.A.; Shushpannikov, P.S.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 0 | 0 | |
2006 | Strained Pt Schottky diodes on n-type Si and Ge | Liao, M.H.; Kuo, P.-S.; Jan, S.-R.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU | Applied Physics Letters | 29 | 27 | |
2006 | Strained Pt Schottky diodes on n-type Si and Ge | Liao, M. H.; Kuo, P.-S.; Jan, S.-R.; Chang, S. T.; Liu, C. W. | Applied Physics Letters | | | |