公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2008 | Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells | T. S. Wang; J. T. Tsai; K. I. Lin; J. S. Hwang; L. C. Chou; HAO-HSIUNG LIN | Materials Science and Engineering B: Solid-State Materials for Advanced Technology | 30 | 28 | |
2013 | Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation | K. I. Lin; K. L. Lin; B. W. Wang; H. H. Lin; J. S. Huang; HAO-HSIUNG LIN | Applied Physics Express | 17 | 15 |