公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2004 | Recessed oxynitride dots on self-assembled Ge quantum dots grown by LPD | CHEE-WEE LIU ; Kuo, P.-S.; Hsu, B.-C.; Chen, P.-W.; Chen, P.S.; CHEE-WEE LIU | Electrochemical and Solid-State Letters | | | |
2004 | Recessed Oxynitride Dots on Self-Assembled Ge Quantum Dots Grown by LPD | Kuo, P.-S.; Hsu, B.-C.; Chen, P.-W.; Chen, P. S.; Liu, C. W. | Electrochemical and Solid-State Letters | | | |
2008 | Reduction of crosstalk between dual power amplifiers using laser treatment | CHEE-WEE LIU ; Chang, H.-L.; Kuo, P.-S.; Hua, W.-C.; Lin, C.-P.; Lin, C.-Y.; CHEE-WEE LIU | IEEE Microwave and Wireless Components Letters | | | |
2009 | Si/ Si<inf>0.2</inf>Ge<inf>0.8</inf> /Si quantum well Schottky barrier diodes | CHEE-WEE LIU ; Kuo, P.-S.; Peng, C.-Y.; Lee, C.-H.; Shen, Y.-Y.; Chang, H.-C.; CHEE-WEE LIU | Applied Physics Letters | | | |
2006 | Strained Pt Schottky diodes on n-type Si and Ge | CHEE-WEE LIU ; Liao, M.H.; Kuo, P.-S.; Jan, S.-R.; Chang, S.T.; CHEE-WEE LIU | Applied Physics Letters | | | |
2006 | Strained Pt Schottky diodes on n-type Si and Ge | Liao, M. H.; Kuo, P.-S.; Jan, S.-R.; Chang, S. T.; Liu, C. W. | Applied Physics Letters | | | |
2008 | Stress-induced hump effects of p-channel polycrystalline silicon thin-film transistors | CHEE-WEE LIU ; Huang, C.-F.; Peng, C.-Y.; Yang, Y.-J.; Sun, H.-C.; Chang, H.-C.; Kuo, P.-S.; Chang, H.-L.; Liu, C.-Z.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2007 | Transport mechanism of SiGe dot MOS tunneling diodes | CHEE-WEE LIU ; Kuo, P.-S.; Lin, C.-H.; Peng, C.-Y.; Fu, Y.-C.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2007 | Transport mechanism of SiGe dot MOS tunneling diodes | Kuo, P.-S.; Lin, C.-H.; Peng, C.-Y.; Fu, Y.-C.; Liu, C.W. | IEEE Electron Device Letters | | | |
2006 | δ-Doped MOS Ge/Si quantum dot/well infrared photodetector | Lin, C.-H.; Yu, C.-Y.; Kuo, P.-S.; Chang, C.-C.; Guo, T.-H.; Liu, C.W. | Thin Solid Films | | | |