公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2013 | Ferromagnetism in cluster free, transition metal doped high $κ$ dilute magnetic oxides: Films and nanocrystals | Wu, CN; Wu, TS; Huang, SY; Lee, WC; Chang, YH; Soo, YL; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Applied Physics | | | |
2000 | First demonstration of GaAs CMOS | Hong, M; Baillargeon, JN; Kwo, J; Mannaerts, JP; Cho, AY; MINGHWEI HONG | 2000 IEEE International Symposium on Compound Semiconductors | 14 | | |
2006 | Flicker noise characteristics in GaAs MOSFETs | Chan, CY; Tsai, PJ; Lee, TC; Hsu, Shawn SH; Kwo, J; Hong, M; MINGHWEI HONG | MBE conference 2006 | | | |
2004 | Fundamental Study and Oxide Reliability of the MBE-Grown Ga 2- x Gd x O 3 Dielectric Oxide for Compound Semiconductor MOSFETs | Kwo, J; Hong, M; Mannaerts, JP; Lee, YJ; Wu, YD; Lee, WG; Milkap, S; Yang, B; Gustaffson, T; MINGHWEI HONG | MRS Proceedings | | | |
1999 | Ga 2 O 3 (Gd 2 O 3)/GaAs power MOSFETs | Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Tsai, HS; Kwo, J; Krajewski, JJ; Chen, YK; Cho, AY; MINGHWEI HONG | Electronics Letters | | | |
1998 | Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Kuo, JM; Hong, M; Hobson, WS; Lothian, JR; Lin, J; Tsai, HS; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG | Electron Device Letters, IEEE | | | |
2007 | Ga 2 O 3 „Gd 2 O 3…/Si 3 N 4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion | Zheng, JF; Tsai, W; Lin, TD; Lee, YJ; Chen, CP; Hong, M; Kwo, J; Cui, S; Ma, TP; MINGHWEI HONG | Applied Physics Letters | | | |
1998 | Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs | Hong, M; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others; MINGHWEI HONG | 28th State-of-the-Art Program on Compound Semiconductors | | | |
2009 | Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices | Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2003 | GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL; Mannaerts, JP; Hong, M; Ng, KK; others; MINGHWEI HONG | Applied Physics Letters | 311 | 280 | |
2003 | GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG | Electron Device Letters, IEEE | 227 | 193 | |
2001 | GaAs MOSFET-Materials Physics and Devices | Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wang, YC; Lay, TS; MINGHWEI HONG | APPC 2000 | | | |
2004 | GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; others; MINGHWEI HONG | Journal of electronic materials | | | |
2003 | GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG | Device Research Conference, 2003 | | | |
2009 | GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al 2 O 3 as a template followed by atomic layer deposition growth | Chang, YH; Chiu, HC; Chang, WH; Kwo, J; Tsai, CC; Hong, JM; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2009 | GaN on Si with nm-thick single-crystal Sc 2 O 3 as a template using molecular beam epitaxy | Lee, WC; Lee, YJ; Kwo, J; Hsu, CH; Lee, CH; Wu, SY; Ng, HM; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2002 | GaN/Gd2O3/GaN Single Crystal Heterostructure | Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG | State-of-the-Art Program on Compound Semiconductors XXXVI, and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II | | | |
2012 | Ge metal-oxide-semiconductor devices with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectric | Chu, LK; Chiang, TH; Lin, TD; Lee, YJ; Chu, RL; Kwo, J; Hong, M; MINGHWEI HONG | Microelectronic Engineering | | | |
2010 | Great reduction of interfacial traps in Al 2 O 3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing | Chang, YC; Merckling, C; Penaud, J; Lu, CY; Brammertz, G; Wang, WE; Hong, M; Kwo, J; Dekoster, J; Caymax, M; others; MINGHWEI HONG | Device Research Conference 2010 | | | |
2014 | Greatly improved interfacial passivation of in-situ high $κ$ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge (100) | Chu, RL; Liu, YC; Lee, WC; Lin, TD; Huang, ML; Pi, TW; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |