公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1998 | Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs | Hong, M; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others; MINGHWEI HONG | 28th State-of-the-Art Program on Compound Semiconductors | | | |
2001 | GaAs MOSFET-Materials Physics and Devices | Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wang, YC; Lay, TS; MINGHWEI HONG | APPC 2000 | | | |
2007 | InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation | Chang, YC; Huang, ML; Lee, YJ; Lee, KY; Lin, TD; Hong, M; Kwo, J; Liao, CC; Cheng, KY; Lay, TS; MINGHWEI HONG | 2007 International Semiconductor Device Research Symposium | | | |
2000 | New High $ɛ$ Gate Dielectrics Gd_2O3 and Y_2O3 for Si | Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal, YJ; Lay, TS; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; others; MINGHWEI HONG | APS Meeting Abstracts | | | |
2005 | Papers from the 22nd North American Conference on Molecular Beam Epitaxy-Oxides-Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy | Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, WH; Lee, WG; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B | | | |
2001 | Probing the microscopic compositions at Ga 2 O 3 (Gd 2 O 3)/GaAs interface by core level photoelectron spectroscopy | Lay, TS; Huang, KH; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Solid-State Electronics | | | |
2001 | Properties of high k gate dielectrics Gd2O3 and Y2O3 for Si | Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal, YJ; Opila, RL; Muller, DA; Chu, SNG; Sapjeta, BJ; Lay, TS; others; MINGHWEI HONG | Journal of Applied Physics | | | |
2003 | Rapid post-metallization annealing effects on high-k Y 2 O 3/Si capacitor | Lay, TS; Liao, YY; Liu, WD; Lai, YH; Hung, Wei-Hsiu; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG | Solid-State Electronics | | | |
1998 | Single Crystal Gd 2 0 3 Films Epitaxially Grown on GaAs-A New Dielectric for GaAs Passivation | Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wu, MC; Lay, TS; Sergent, AM; MINGHWEI HONG | MRS Proceedings | | | |
2006 | Structural and electrical characteristics of Ga2O3 (Gd2O3)/GaAs under high temperature annealing | Chen, CP; Lee, YJ; Chang, YC; Yang, ZK; Hong, M; Kwo, J; Lee, HY; Lay, TS; MINGHWEI HONG | Journal of applied physics | | | |