公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2011 | Electronic structures of Ga2O3 (Gd2O3) gate dielectric on n-Ge (001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study | Pi, T-W; Lee, WC; Huang, ML; Chu, LK; Lin, TD; Chiang, TH; Wang, YC; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Applied Physics | | | |
2009 | Enhancement Mode InGaAs MOSFETs | Lin, TD; Chiu, HC; Chang, P; Lee, WC; Kwo, JR; Tsai, W; Hong, M; MINGHWEI HONG | Meeting Abstracts | | | |
2011 | Epitaxial stabilization of a monoclinic phase in Y 2 O 3 films on c-plane GaN | Chang, WH; Chang, P; Lee, WC; Lai, TY; Kwo, J; Hsu, C-H; Hong, JM; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2013 | Ferromagnetism in cluster free, transition metal doped high $κ$ dilute magnetic oxides: Films and nanocrystals | Wu, CN; Wu, TS; Huang, SY; Lee, WC; Chang, YH; Soo, YL; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Applied Physics | | | |
2009 | GaN on Si with nm-thick single-crystal Sc 2 O 3 as a template using molecular beam epitaxy | Lee, WC; Lee, YJ; Kwo, J; Hsu, CH; Lee, CH; Wu, SY; Ng, HM; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2014 | Greatly improved interfacial passivation of in-situ high $κ$ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge (100) | Chu, RL; Liu, YC; Lee, WC; Lin, TD; Huang, ML; Pi, TW; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2008 | Growth and structural characteristics of GaN/AlN/nanothick gamma-Al (2) O (3)/Si (111) | Lee, WC; Lee, YJ; Tung, LT; Wu, SY; Lee, CH; Hong, M; Ng, HM; Kwo, J; Hsu, CH; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2008 | High-quality nanothick single-crystal Y (2) O (3) films epitaxially grown on Si (111): Growth and structural characteristics | Lee, YJ; Lee, WC; Nieh, CW; Yang, ZK; Kortan, AR; Hong, M; Kwo, J; Hsu, C-H; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2005 | High-quality thin single-crystal $γ$-Al2O3 films grown on Si (111) | Wu, SY; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, WC; Huang, YL; MINGHWEI HONG | Applied Physics Letters | | | |
2011 | High-resolution core-level photoemission study of CF ${$sub 4$}$-treated Gd ${$sub 2$}$ O ${$sub 3$}$(Ga ${$sub 2$}$ O ${$sub 3$}$) gate dielectric on Ge probed by synchrotron radiation | Pi, T-W; Huang, ML; Kwo, J; Lee, WC; Chu, LK; Lin, TD; Chiang, TH; Wang, YC; Wu, YD; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2003 | Impact of successful larval rearing on the competitiveness of the eel aquaculture in Taiwan, Japan, and China. | Lee, WC; Chen, YH; LeeY, C; Liao, IC | J Fish Soc Taiwania | | | |
2012 | In-situ MBE and ALD deposited HfO2 on In0. 53Ga0. 47As | Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG | APS Meeting Abstracts | | | |
2012 | In-situ photoemission analyses of ALD-oxide/InxGa1-xAs (001) interfaces | Huang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W; Hong, M; Kwo, J; MINGHWEI HONG | APS Meeting Abstracts | | | |
2012 | InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics | Lin, CA; Huang, ML; Chiu, P-C; Lin, H-K; Chyi, J-I; Chiang, TH; Lee, WC; Chang, YC; Chang, YH; Brown, GJ; others; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2008 | Inelastic electron tunneling spectroscopy study of metal-oxide-semiconductor diodes based on high-k gate dielectrics | You, SL; Huang, CC; Wang, CJ; Ho, HC; Kwo, J; Lee, WC; Lee, KY; Wu, YD; Lee, YJ; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2008 | Inelastic Electron Tunneling Spectroscopy Study of MOS Diodes Based on High-kappa Gate Dielectrics | You, SL; Huang, CC; Wang, CJ; Ho, HC; Kwo, J; Lee, WC; Lee, KY; Wu, YD; Lee, YJ; Hong, M; MINGHWEI HONG | APS Meeting Abstracts | | | |
2010 | InGaAs and Ge MOSFETs with a common high $κ$ gate dielectric | Lee, WC; Lin, TD; Chu, LK; Chang, P; Chang, YC; Chu, RL; Chiu, HC; Lin, CA; Chang, WH; Chiang, TH; others; MINGHWEI HONG | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology | | | |
2011 | InGaAs and Ge MOSFETs with high $κ$ dielectrics | Lee, WC; Chang, P; Lin, TD; Chu, LK; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG | Microelectronic Engineering | | | |
2009 | InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3 (Gd2O3) as a gate dielectric | Lin, TD; Chiu, HC; Chang, P; Lee, WC; Chiang, TH; Kwo, JR; Tsai, W; Hong, M; MINGHWEI HONG | ECS Transactions | | | |
2010 | InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS | Hong, M; Kwo, J; Lin, TD; Huang, ML; Lee, WC; Chang, P; MINGHWEI HONG | Fundamentals of III-V Semiconductor MOSFETs | 1 | 4 | |