| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 1995 | Body force weight functions of cracked bodies | Ma, C.-C.; Liao, M.-H.; CHIEN-CHING MA | Engineering Fracture Mechanics | 0 | 0 | |
| 2005 | Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers | Yu, C.-Y.; Chen, P.-W.; Jan, S.-R.; Liao, M.-H.; Liao, K.-F.; CHEE-WEE LIU ; MING-HAN LIAO | Applied Physics Letters | 12 | 11 | |
| 2005 | Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers | Yu, C.-Y.; Chen, P.-W.; Jan, S.-R.; Liao, M.-H.; Liao, K.-F.; Liu, C.W.; CHEE-WEE LIU | Applied Physics Letters | 12 | 11 | |
| 2005 | Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers | Yu, C.-Y.; Chen, P.-W.; Jan, S.-R.; Liao, M.-H.; Liao, Kao-Feng; Liu, C. W. | Applied Physics Letters | | |  |
| 2009 | Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering | Chang, S.-T.; Liao, M.-H.; Lee, C.-C.; Huang, J.; Wang, W.-C.; MING-HAN LIAO ; MING-HAN LIAO | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 2 | 0 | |
| 2019 | Comparison of microstructures and magnetic properties in FePt alloy films deposited by direct current magnetron sputtering and high power impulse magnetron sputtering | Yang, W.-S.; Sun, T.-H.; Chen, S.-C.; Jen, S.-U.; Guo, H.-J.; Liao, M.-H.; Chen, J.-R.; MING-HAN LIAO | Journal of Alloys and Compounds | 5 | 3 | |
| 2015 | The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators | Liao, M.-H.; Lien, C.; MING-HAN LIAO | AIP Advances | 11 | 9 | |
| 2020 | The Demonstration of 3-D Bi 2.0 Te 2.7 Se 0.3 /Bi 0.4 Te 3.0 Sb 1.6 Thermoelectric Devices by Ionized Sputter System | Liao, M.-H.; Huang, K.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU | IEEE Transactions on Electron Devices | 1 | 1 | |
| 2020 | The demonstration of carbon nanotubes (CNTs) as flip-chip connections in 3-D integrated circuits with an ultralow connection resistance | Liao, M.-H.; Lu, P.-Y.; Su, W.-J.; Chen, S.-C.; Hung, H.-T.; Kao, C.-R.; Pu, W.-C.; Chen, C.-C.A.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU ; C. ROBERT KAO | IEEE Transactions on Electron Devices | 4 | 4 | |
| 2015 | The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme | Liao, M.-H.; Huang, S.C.; MING-HAN LIAO | Applied Physics Letters | 6 | 3 | |
| 1994 | Determinations of mixed-mode stress intensity factors for cracked bodies subjected to thermal loadings by using the thermal weight function method | Ma, C.-C.; Liao, M.-H.; CHIEN-CHING MA | Journal of Thermal Stresses | 6 | 4 | |
| 2019 | The Development of a Dynamic Model to Investigate the Dielectric Layer Thickness Effect for the Device Performance in Triboelectric Nanogenerators | Liao, M.-H.; Wu, C.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU | IEEE Transactions on Electron Devices | 2 | 2 | |
| 2007 | Diosgenin, a steroidal sapogenin, enhances antigen-specific IgG 2a and interferon-γ expression in ovalbumin-sensitized BALB/c mice | Jan, T.-R.; Wey, S.-P.; Kuan, C.-C.; Liao, M.-H.; Wu, H.-Y.; TONG-RONG JAN | Planta Medica | 26 | 22 | |
| 2017 | The effect of CESL and dummy poly gate for n-type MOSFETs with short Si<inf>0.75</inf>Ge<inf>0.25</inf> channel | Lee, C.-C.; Hsu, H.-W.; Liao, M.-H.; MING-HAN LIAO | Vacuum | 1 | 1 | |
| 2013 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO <inf>2</inf> gate dielectrics by post-deposition remote N <inf>2</inf> , N <inf>2</inf> /H <inf>2</inf> , and NH <inf>3</inf> plasma treatments | Huang, L.-T.; Chang, M.-L.; Huang, J.-J.; Kuo, C.-L.; Lin, H.-C.; Liao, M.-H.; Lee, M.-H.; Chen, M.-J.; CHIN-LUNG KUO | Journal of Physics D: Applied Physics | 10 | 7 | |
| 2013 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO <inf>2</inf> gate dielectrics by post-deposition remote N <inf>2</inf> , N <inf>2</inf> /H <inf>2</inf> , and NH <inf>3</inf> plasma treatments | Huang, L.-T.; Chang, M.-L.; Huang, J.-J.; Kuo, C.-L.; Lin, H.-C.; Liao, M.-H.; Lee, M.-H.; Chen, M.-J.; MIIN-JANG CHEN | Journal of Physics D: Applied Physics | 10 | 7 | |
| 2013 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO<inf>2</inf> gate dielectrics by post-deposition remote N<inf>2</inf>, N<inf>2</inf>/H<inf>2</inf>, and NH<inf>3</inf> plasma treatments | Huang, L.-T.; Chang, M.-L.; Huang, J.-J.; Kuo, C.-L.; Lin, H.-C.; Liao, M.-H.; Lee, M.-H.; Chen, M.-J.; MING-HAN LIAO | Journal of Physics D: Applied Physics | 10 | 7 | |
| 2011 | The effect of surface treatment on omni-directional efficiency of the silicon solar cells with micro-spherical texture/ITO stacks | Chen, C.-H.; Juan, P.-C.; Liao, M.-H.; Tsai, J.-L.; Hwang, H.-L.; MING-HAN LIAO | Solar Energy Materials and Solar Cells | 14 | 10 | |
| 2015 | Erratum to "Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs" | Liao, M.-H.; Chen, C.H.; Chang, L.C.; Yang, C.; MING-HAN LIAO ; MING-HAN LIAO | IEEE Transactions on Electron Devices | 1 | 1 | |
| 2015 | Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs” [Aug 12 2033-2036] | Liao, M.-H.; Chen, C. H.; Chang, L. C.; Yang, C.; Kao, S. C.; MING-HAN LIAO | IEEE Transactions on Electron Devices | 1 | 1 | |
