| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2009 | Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering | Chang, S.-T.; Liao, M.-H.; Lee, C.-C.; Huang, J.; Wang, W.-C.; MING-HAN LIAO ; MING-HAN LIAO | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 2 | 0 | |
| 2019 | Comparison of microstructures and magnetic properties in FePt alloy films deposited by direct current magnetron sputtering and high power impulse magnetron sputtering | Yang, W.-S.; Sun, T.-H.; Chen, S.-C.; Jen, S.-U.; Guo, H.-J.; Liao, M.-H.; Chen, J.-R.; MING-HAN LIAO | Journal of Alloys and Compounds | 5 | 3 | |
| 2015 | The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators | Liao, M.-H.; Lien, C.; MING-HAN LIAO | AIP Advances | 11 | 9 | |
| 2020 | The Demonstration of 3-D Bi 2.0 Te 2.7 Se 0.3 /Bi 0.4 Te 3.0 Sb 1.6 Thermoelectric Devices by Ionized Sputter System | Liao, M.-H.; Huang, K.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU | IEEE Transactions on Electron Devices | 1 | 1 | |
| 2020 | The demonstration of carbon nanotubes (CNTs) as flip-chip connections in 3-D integrated circuits with an ultralow connection resistance | Liao, M.-H.; Lu, P.-Y.; Su, W.-J.; Chen, S.-C.; Hung, H.-T.; Kao, C.-R.; Pu, W.-C.; Chen, C.-C.A.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU ; C. ROBERT KAO | IEEE Transactions on Electron Devices | 4 | 4 | |
| 2015 | The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme | Liao, M.-H.; Huang, S.C.; MING-HAN LIAO | Applied Physics Letters | 6 | 3 | |
| 1994 | Determinations of mixed-mode stress intensity factors for cracked bodies subjected to thermal loadings by using the thermal weight function method | Ma, C.-C.; Liao, M.-H.; CHIEN-CHING MA | Journal of Thermal Stresses | 6 | 4 | |
| 2019 | The Development of a Dynamic Model to Investigate the Dielectric Layer Thickness Effect for the Device Performance in Triboelectric Nanogenerators | Liao, M.-H.; Wu, C.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU | IEEE Transactions on Electron Devices | 2 | 2 | |
| 2007 | Diosgenin, a steroidal sapogenin, enhances antigen-specific IgG 2a and interferon-γ expression in ovalbumin-sensitized BALB/c mice | Jan, T.-R.; Wey, S.-P.; Kuan, C.-C.; Liao, M.-H.; Wu, H.-Y.; TONG-RONG JAN | Planta Medica | 26 | 22 | |
| 2017 | The effect of CESL and dummy poly gate for n-type MOSFETs with short Si<inf>0.75</inf>Ge<inf>0.25</inf> channel | Lee, C.-C.; Hsu, H.-W.; Liao, M.-H.; MING-HAN LIAO | Vacuum | 1 | 1 | |
| 2013 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO <inf>2</inf> gate dielectrics by post-deposition remote N <inf>2</inf> , N <inf>2</inf> /H <inf>2</inf> , and NH <inf>3</inf> plasma treatments | Huang, L.-T.; Chang, M.-L.; Huang, J.-J.; Kuo, C.-L.; Lin, H.-C.; Liao, M.-H.; Lee, M.-H.; Chen, M.-J.; MIIN-JANG CHEN | Journal of Physics D: Applied Physics | 10 | 7 | |
| 2013 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO <inf>2</inf> gate dielectrics by post-deposition remote N <inf>2</inf> , N <inf>2</inf> /H <inf>2</inf> , and NH <inf>3</inf> plasma treatments | Huang, L.-T.; Chang, M.-L.; Huang, J.-J.; Kuo, C.-L.; Lin, H.-C.; Liao, M.-H.; Lee, M.-H.; Chen, M.-J.; CHIN-LUNG KUO | Journal of Physics D: Applied Physics | 10 | 7 | |
| 2013 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO<inf>2</inf> gate dielectrics by post-deposition remote N<inf>2</inf>, N<inf>2</inf>/H<inf>2</inf>, and NH<inf>3</inf> plasma treatments | Huang, L.-T.; Chang, M.-L.; Huang, J.-J.; Kuo, C.-L.; Lin, H.-C.; Liao, M.-H.; Lee, M.-H.; Chen, M.-J.; MING-HAN LIAO | Journal of Physics D: Applied Physics | 10 | 7 | |
| 2011 | The effect of surface treatment on omni-directional efficiency of the silicon solar cells with micro-spherical texture/ITO stacks | Chen, C.-H.; Juan, P.-C.; Liao, M.-H.; Tsai, J.-L.; Hwang, H.-L.; MING-HAN LIAO | Solar Energy Materials and Solar Cells | 14 | 10 | |
| 2015 | Erratum to "Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs" | Liao, M.-H.; Chen, C.H.; Chang, L.C.; Yang, C.; MING-HAN LIAO ; MING-HAN LIAO | IEEE Transactions on Electron Devices | 1 | 1 | |
| 2015 | Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs” [Aug 12 2033-2036] | Liao, M.-H.; Chen, C. H.; Chang, L. C.; Yang, C.; Kao, S. C.; MING-HAN LIAO | IEEE Transactions on Electron Devices | 1 | 1 | |
| 2015 | Erratum: The novel chamber hardware design to improve the thin film deposition quality in both 12″ (300 mm) and 18″ (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique; (AIP Advances (2013) 3:7 (072117)) | Liao, M.-H.; MING-HAN LIAO ; MING-HAN LIAO | AIP Advances | 0 | 0 | |
| 2015 | Erratum: “The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique” [AIP Advances 3(7), 072117 (2013)] | Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO | AIP Advances | 0 | 0 | |
| 2013 | Experimental demonstration for the implant-free In<inf>0.53</inf>Ga <inf>0.47</inf>As quantum-well metal-insulator-semiconductor field-effect transistors with ultra-low source/drain resistance | Liao, M.-H.; Chang, L.C.; MING-HAN LIAO | Applied Physics Letters | 9 | 7 | |
| 2013 | Experimental demonstration for ultra-low on-resistance in raised source/drain In<inf>0.53</inf>Ga<inf>0.47</inf>As QW-MOSFETs with implant-free process | Liao, M.-H.; Chan, P.-G.; MING-HAN LIAO | Journal of Physics D: Applied Physics | 1 | 1 | |
