| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2017 | The effect of CESL and dummy poly gate for n-type MOSFETs with short Si<inf>0.75</inf>Ge<inf>0.25</inf> channel | Lee, C.-C.; Hsu, H.-W.; Liao, M.-H.; MING-HAN LIAO | Vacuum | 1 | 1 | |
| 2013 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO <inf>2</inf> gate dielectrics by post-deposition remote N <inf>2</inf> , N <inf>2</inf> /H <inf>2</inf> , and NH <inf>3</inf> plasma treatments | Huang, L.-T.; Chang, M.-L.; Huang, J.-J.; Kuo, C.-L.; Lin, H.-C.; Liao, M.-H.; Lee, M.-H.; Chen, M.-J.; CHIN-LUNG KUO | Journal of Physics D: Applied Physics | 10 | 7 | |
| 2013 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO <inf>2</inf> gate dielectrics by post-deposition remote N <inf>2</inf> , N <inf>2</inf> /H <inf>2</inf> , and NH <inf>3</inf> plasma treatments | Huang, L.-T.; Chang, M.-L.; Huang, J.-J.; Kuo, C.-L.; Lin, H.-C.; Liao, M.-H.; Lee, M.-H.; Chen, M.-J.; MIIN-JANG CHEN | Journal of Physics D: Applied Physics | 10 | 7 | |
| 2013 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO<inf>2</inf> gate dielectrics by post-deposition remote N<inf>2</inf>, N<inf>2</inf>/H<inf>2</inf>, and NH<inf>3</inf> plasma treatments | Huang, L.-T.; Chang, M.-L.; Huang, J.-J.; Kuo, C.-L.; Lin, H.-C.; Liao, M.-H.; Lee, M.-H.; Chen, M.-J.; MING-HAN LIAO | Journal of Physics D: Applied Physics | 10 | 7 | |
| 2011 | The effect of surface treatment on omni-directional efficiency of the silicon solar cells with micro-spherical texture/ITO stacks | Chen, C.-H.; Juan, P.-C.; Liao, M.-H.; Tsai, J.-L.; Hwang, H.-L.; MING-HAN LIAO | Solar Energy Materials and Solar Cells | 14 | 10 | |
| 2015 | Erratum to "Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs" | Liao, M.-H.; Chen, C.H.; Chang, L.C.; Yang, C.; MING-HAN LIAO ; MING-HAN LIAO | IEEE Transactions on Electron Devices | 1 | 1 | |
| 2015 | Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs” [Aug 12 2033-2036] | Liao, M.-H.; Chen, C. H.; Chang, L. C.; Yang, C.; Kao, S. C.; MING-HAN LIAO | IEEE Transactions on Electron Devices | 1 | 1 | |
| 2015 | Erratum: The novel chamber hardware design to improve the thin film deposition quality in both 12″ (300 mm) and 18″ (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique; (AIP Advances (2013) 3:7 (072117)) | Liao, M.-H.; MING-HAN LIAO ; MING-HAN LIAO | AIP Advances | 0 | 0 | |
| 2015 | Erratum: “The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique” [AIP Advances 3(7), 072117 (2013)] | Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO | AIP Advances | 0 | 0 | |
| 2013 | Experimental demonstration for the implant-free In<inf>0.53</inf>Ga <inf>0.47</inf>As quantum-well metal-insulator-semiconductor field-effect transistors with ultra-low source/drain resistance | Liao, M.-H.; Chang, L.C.; MING-HAN LIAO | Applied Physics Letters | 9 | 7 | |
| 2013 | Experimental demonstration for ultra-low on-resistance in raised source/drain In<inf>0.53</inf>Ga<inf>0.47</inf>As QW-MOSFETs with implant-free process | Liao, M.-H.; Chan, P.-G.; MING-HAN LIAO | Journal of Physics D: Applied Physics | 1 | 1 | |
| 2013 | Experimental demonstration on the ultra-low source/drain resistance by metal-insulator-semiconductor contact structure in In<inf>0.53</inf>Ga <inf>0.47</inf>As field-effect transistors | Liao, M.-H.; Chen, P.-K.; MING-HAN LIAO | AIP Advances | 7 | 6 | |
| 2018 | Ferroelectric HfZrO <sub>x</sub> FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance) | Chen, Kuan-Ting; Gu, Siang-Sheng; Wang, Zheng-Ying; Liao, Chun-Yu; Chou, Yu-Chen; Hong, Ruo-Chun; Chen, Shih-Yao; Chen, Hong-Yu; Siang, Gao-Yu; Lo, Chieh; Chen, Pin-Guang; Liao, M.-H.; Li, Kai-Shin; Chang, Shu-Tong; Lee, Min-Hung; MING-HAN LIAO | IEEE Journal of the Electron Devices Society | 14 | 14 | |
| 2019 | Ferroelectric HfZrO<inf>2</inf> FETs for steep switch onset | Chen, K.-T.; Liao, C.-Y.; Chen, H.-Y.; Lo, C.; Siang, G.-Y.; Lin, Y.-Y.; Tseng, Y.-J.; Chang, C.; Chueh, C.-Y.; Yang, Y.-J.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO | Microelectronic Engineering | 6 | 5 | |
| 2016 | Ge<inf>1 - X</inf>Si<inf>x</inf> on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationships | Lee, C.-C.; Hsieh, C.-P.; Huang, P.-C.; Cheng, S.-W.; Liao, M.-H.; MING-HAN LIAO | Thin Solid Films | 3 | 2 | |
| 2013 | Improved Si<inf>0.5</inf>Ge<inf>0.5</inf>/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy | Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO | AIP Advances | 0 | 0 | |
| 2019 | Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO<inf>2</inf> Capacitor with Molybdenum Capping Electrode | Chen, K.-T.; Liao, C.-Y.; Lo, C.; Chen, H.-Y.; Siang, G.-Y.; Liu, S.; Chang, S.-C.; Liao, M.-H.; Chang, S.-T.; Lee, M.H.; MING-HAN LIAO | 2019 Electron Devices Technology and Manufacturing Conference | 11 | 0 | |
| 2017 | In <inf>0.18</inf> Al <inf>0.82</inf> N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact | Chen, P.-G.; Tang, M.; Liao, M.-H.; MING-HAN LIAO ; MING-HAN LIAO | Solid-State Electronics | 5 | 5 | |
| 2017 | In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact | Chen, P.-G.; Tang, M.; Liao, M.-H.; Lee, M.H.; MING-HAN LIAO | Solid-State Electronics | 5 | 5 | |
| 2019 | Influence of sputtering power on the electrical properties of In-Sn-Zn oxide thin films deposited by high power impulse magnetron sputtering | Li, Z.-Y.; Chen, S.-C.; Huo, Q.-H.; Liao, M.-H.; Dai, M.-J.; Lin, S.-S.; Yang, T.-L.; Sun, H.; MING-HAN LIAO | Coatings | 4 | 5 | |
