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  1. NTU Scholars
  2. Research Outputs

Browsing by Author Liao, M.-H.


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Showing results 29 to 48 of 65 < previous   next >
Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
2018Ferroelectric HfZrO <sub>x</sub> FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)Chen, Kuan-Ting; Gu, Siang-Sheng; Wang, Zheng-Ying; Liao, Chun-Yu; Chou, Yu-Chen; Hong, Ruo-Chun; Chen, Shih-Yao; Chen, Hong-Yu; Siang, Gao-Yu; Lo, Chieh; Chen, Pin-Guang; Liao, M.-H.; Li, Kai-Shin; Chang, Shu-Tong; Lee, Min-Hung; MING-HAN LIAO IEEE Journal of the Electron Devices Society1414
2019Ferroelectric HfZrO<inf>2</inf> FETs for steep switch onsetChen, K.-T.; Liao, C.-Y.; Chen, H.-Y.; Lo, C.; Siang, G.-Y.; Lin, Y.-Y.; Tseng, Y.-J.; Chang, C.; Chueh, C.-Y.; Yang, Y.-J.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO Microelectronic Engineering65
2016Ge<inf>1 - X</inf>Si<inf>x</inf> on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationshipsLee, C.-C.; Hsieh, C.-P.; Huang, P.-C.; Cheng, S.-W.; Liao, M.-H.; MING-HAN LIAO Thin Solid Films32
2013Improved Si<inf>0.5</inf>Ge<inf>0.5</inf>/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopyLiao, M.-H.; Chen, C.-H.; MING-HAN LIAO AIP Advances00
2019Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO<inf>2</inf> Capacitor with Molybdenum Capping ElectrodeChen, K.-T.; Liao, C.-Y.; Lo, C.; Chen, H.-Y.; Siang, G.-Y.; Liu, S.; Chang, S.-C.; Liao, M.-H.; Chang, S.-T.; Lee, M.H.; MING-HAN LIAO 2019 Electron Devices Technology and Manufacturing Conference110
2017In <inf>0.18</inf> Al <inf>0.82</inf> N/AlN/GaN MIS-HEMT on Si with Schottky-drain contactChen, P.-G.; Tang, M.; Liao, M.-H.; MING-HAN LIAO ; MING-HAN LIAO Solid-State Electronics55
2017In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contactChen, P.-G.; Tang, M.; Liao, M.-H.; Lee, M.H.; MING-HAN LIAO Solid-State Electronics55
2019Influence of sputtering power on the electrical properties of In-Sn-Zn oxide thin films deposited by high power impulse magnetron sputteringLi, Z.-Y.; Chen, S.-C.; Huo, Q.-H.; Liao, M.-H.; Dai, M.-J.; Lin, S.-S.; Yang, T.-L.; Sun, H.; MING-HAN LIAO Coatings45
2013The innovation telehospice system in Taiwan: A home-based hospice care service applicationSu, M.-J.; Hsieh, Y.-J.; CHIEN-AN YAO ; Lai, F.-P.; Liao, M.-H.; FEI-PEI LAI Lecture Notes in Electrical Engineering00
2020The Investigation for Thickness-Dependent Electrical Performance on BaTiO3 /BiFeO3 Bilayer Ferromagnetic CapacitorsLien, C.; Hsieh, C.-F.; Wu, T.-C.; Yang, C.-S.; Lee, M.-H.; Xu, J.-J.; Hu, C.-W.; Huang, C.; Chang, S.-Z.; Liao, M.-H.; MING-HAN LIAO IEEE Transactions on Electron Devices22
2011Investigation of a potential scintigraphic tracer for imaging apoptosis: Radioiodinated annexin V-Kunitz protease inhibitor fusion proteinWun, T.-C.; Liao, M.-H.; Jan, T.-R.; Chiang, C.-C.; Yen, K.-C.; Liao, T.-Z.; Chen, M.-W.; Chi, C.-W.; Yen, T.-C.; Wey, S.-P.; TONG-RONG JAN Journal of Biomedicine and Biotechnology 43
2017The investigation of self-heating effect on Si<inf>1-x</inf>Ge<inf>x</inf> FinFETs with different device structures, Ge concentration, and operated voltagesLiao, M.-H.; Hsieh, C.-P.; Lee, C.-C.; MING-HAN LIAO AIP Advances11
2012Iron oxide nanoparticles suppressed T helper 1 cell-mediated immunity in a murine model of delayed-type hypersensitivityShen, C.-C.; Liang, H.-J.; Wang, C.-C.; Liao, M.-H.; Jan, T.-R.; TONG-RONG JAN International Journal of Nanomedicine 4844
2010Monitoring of 2-deoxy-2-[<sup>18</sup>F]fluoro-D-glucose uptake in tumor-bearing mice using high-sensitivity projection imaging: Compared with PET imagingLiao, M.-H.; Wey, S.-P.; Jan, M.-L.; Chiang, C.-C.; Liao, T.-Z.; Chi, C.-W.; Shen, L.-H.; Jan, T.-R.; TONG-RONG JAN Nuclear Medicine Communications 00
2018Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: ReplyLee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO Optics Express00
2014Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistorsLee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO Optics Express5248
2014Morphological stabilization by supramolecular perfluorophenyl-C 60 interactions leading to efficient and thermally stable organic photovoltaicsLiao, M.-H.; Tsai, C.-E.; Lai, Y.-Y.; Cao, F.-Y.; Wu, J.-S.; Wang, C.-L.; Hsu, C.-S.; Liau, I.; Cheng, Y.-J.; YU-YING LAI Advanced Functional Materials 4546
2019Non-Volatile Ferroelectric FETs Using 5-nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> with High Data Retention and Read Endurance for 1T Memory ApplicationsChen, K.-T.; Chen, H.-Y.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO IEEE Electron Device Letters5652
2013The novel chamber hardware design to improve the thin film deposition quality in both 12 <sup>?</sup> (300 mm) and 18 <sup>?</sup> (450 mm) wafers with the development of 3D full chamber modeling and experimental visual techniqueLiao, M.-H.; Chen, C.-H.; MING-HAN LIAO AIP Advances43
2013Optimized surface structure by laser treatment for the relaxation of residual stress in bent GaN filmChen, C.-H.; Liao, M.-H.; Chang, L.-C.; Kao, S.-C.; Yang, C.; Yu, M.-Y.; Liu, G.-H.; MING-HAN LIAO Journal of Physics D: Applied Physics00
Showing results 29 to 48 of 65 < previous   next >

臺大位居世界頂尖大學之列,為永久珍藏及向國際展現本校豐碩的研究成果及學術能量,圖書館整合機構典藏(NTUR)與學術庫(AH)不同功能平台,成為臺大學術典藏NTU scholars。期能整合研究能量、促進交流合作、保存學術產出、推廣研究成果。

To permanently archive and promote researcher profiles and scholarly works, Library integrates the services of “NTU Repository” with “Academic Hub” to form NTU Scholars.

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開放取用是從使用者角度提升資訊取用性的社會運動,應用在學術研究上是透過將研究著作公開供使用者自由取閱,以促進學術傳播及因應期刊訂購費用逐年攀升。同時可加速研究發展、提升研究影響力,NTU Scholars即為本校的開放取用典藏(OA Archive)平台。(點選深入了解OA)

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