公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2015 | Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole | Chen, Y.-P.; Su, V.; Lee, M.-L.; You, Y.-H.; Chen, P.-H.; Lin, R.-M.; Kuan, C.-H.; CHIEH-HSIUNG KUAN | Proceedings of SPIE - The International Society for Optical Engineering | 1 | 0 | |
1997 | Room temperature unpassivated inas P-I-N photodetectors grown by molecular beam epitaxy | Lin, R.-M.; Tang, S.-F.; SI-CHEN LEE ; CHIEH-HSIUNG KUAN ; Chen, G.-S.; Sun, T.-P.; Wu, J.-C. | IEEE Transactions on Electron Devices | 31 | 30 | |
2015 | Strain relaxation in InGaN/GaN multiple-quantum wells by nano-patterned sapphire substrates with smaller period | Chen, P.-H.; Su, V.-C.; Lee, M.-L.; You, Y.-H.; Chen, Y.-P.; Hung, Z.-H.; Hsu, T.-C.; Lin, Y.-Y.; Lin, R.-M.; Kuan, C.-H.; CHIEH-HSIUNG KUAN | CLEO: Applications and Technology | 0 | 0 | |
2000 | Study of current leakage in InAs p-i-n photodetectors | Lin, R.-M.; Tang, S.-F.; Kuan, C.H.; CHIEH-HSIUNG KUAN | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 7 | 4 | |
2013 | Suppressed quantum-confined Stark effect in InGaN-based LEDs with nano-sized patterned sapphire substrates | Su, V.-C.; Chen, P.-H.; Lin, R.-M.; Lee, M.-L.; You, Y.-H.; Ho, C.-I.; Chen, Y.-C.; Chen, W.-F.; Kuan, C.-H.; CHIEH-HSIUNG KUAN | Optics Express | 50 | 41 | |
2019 | Suppression of ˇ§volcanoˇ¨ morphology and parasitic defect luminescence in AlGaN-based deep-UV light-emitting diode epitaxy | Huang, C.-Y.; Liu, T.-Y.; Huang, S.-M.; Chang, K.-H.; Tai, T.-Y.; Kuan, C.-H.; Chang, J.T.-C.; Lin, R.-M.; Kuo, H.-C.; CHIEH-HSIUNG KUAN | Results in Physics | 6 | 5 | |
2015 | Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs | Shih, H.-Y.; Shiojiri, M.; Chen, C.-H.; Yu, S.-F.; Ko, C.-T.; Yang, J.-R.; Lin, R.-M.; JER-REN YANG ; MIIN-JANG CHEN | Scientific Reports | 53 | 45 | |
2013 | Ultraviolet electroluminescence from nitrogen-doped zno-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique | Chien, J.-F.; Liao, H.-Y.; Yu, S.-F.; Lin, R.-M.; Shiojiri, M.; Shyue, J.-J.; Chen, M.-J.; MIIN-JANG CHEN | ACS Applied Materials and Interfaces | 14 | 13 | |
2014 | Utilizing Two-Dimensional Photonic Crystals in Different Arrangement to Investigate the Correlation Between the Air Duty Cycle and the Light Extraction Enhancement of InGaN-Based Light-Emitting Diodes | Lee, M.-L.; You, Y.-H.; Lin, R.-M.; Hsieh, C.-J.; Su, V.-C.; Chen, P.-H.; Kuan, C.-H.; CHIEH-HSIUNG KUAN | IEEE Photonics Journal | 5 | 2 | |