公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2015 | Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs | Shih, H.-Y.; Shiojiri, M.; Chen, C.-H.; Yu, S.-F.; Ko, C.-T.; Yang, J.-R.; Lin, R.-M.; JER-REN YANG ; MIIN-JANG CHEN | Scientific Reports | 53 | 45 | |
2013 | Ultraviolet electroluminescence from nitrogen-doped zno-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique | Chien, J.-F.; Liao, H.-Y.; Yu, S.-F.; Lin, R.-M.; Shiojiri, M.; Shyue, J.-J.; Chen, M.-J.; MIIN-JANG CHEN | ACS Applied Materials and Interfaces | | | |
2014 | Utilizing Two-Dimensional Photonic Crystals in Different Arrangement to Investigate the Correlation Between the Air Duty Cycle and the Light Extraction Enhancement of InGaN-Based Light-Emitting Diodes | CHIEH-HSIUNG KUAN ; Lee, M.-L.; You, Y.-H.; Lin, R.-M.; Hsieh, C.-J.; Su, V.-C.; Chen, P.-H.; CHIEH-HSIUNG KUAN | IEEE Photonics Journal | | | |