Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
---|---|---|---|---|---|---|
2007 | Self-aligned inversion n-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs MOSFET with TiN gate and Ga<inf>2</inf>O<inf>3</inf> (Gd<inf>2</inf>O <inf>3</inf>) dielectric | Chen, C.-P.; Lin, T.-D.; Chang, Y.-C.; MINGHWEI HONG ; Kwo, J.R. | 2007 International Semiconductor Device Research Symposium | |||
2013 | Surface passivation of GaSb(100) using molecular beam epitaxy of Y2O3 and atomic layer deposition of Al2O3: A comparative study | Chu, R.-L.; Hsueh, W.-J.; Chiang, T.-H.; Lee, W.-C.; Lin, H.-Y.; Lin, T.-D.; Brown, G.J.; Chyi, J.-I.; Huang, T.S.; Pi, T.-W.; Kwo, J.R.; MINGHWEI HONG | Applied Physics Express |