公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2011 | Low interfacial density of states around midgap in MBE-Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As | Lin, CA; Chiu, HC; Chiang, TH; Chang, YC; Lin, TD; Kwo, J; Wang, W-E; Dekoster, J; Heyns, M; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2007 | MBE and ALD grown High k Dielectrics Gate Stacks on GaN | Chang, YC; Lee, KY; Lee, WC; Lin, TD; Lee, YJ; Huang, ML; Hong, M; Kwo, J; Wang, YH; MINGHWEI HONG | APS Meeting Abstracts | | | |
2007 | MBE grown high-quality Gd 2 O 3/Si (111) hetero-structure | Lin, TD; Hang, MC; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2011 | MBE—Enabling technology beyond Si CMOS | Chang, P; Lee, WC; Lin, TD; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2009 | Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3) on Ge (100) | Chu, LK; Lin, TD; Lee, CH; Tung, LT; Lee, WC; Chu, RL; Chang, CC; Hong, Mingyi; Kwo, J; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
2008 | Molecular beam epitaxy grown Ga2O3 (Gd2O3) high kappa dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics | Lee, CH; Lin, TD; Tung, LT; Huang, ML; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2009 | Molecular beam epitaxy-grown Al 2 O 3/HfO 2 high-$κ$ dielectrics for germanium | Lee, WC; Chin, BH; Chu, LK; Lin, TD; Lee, YJ; Tung, LT; Lee, CH; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Crystal Growth | | | |
2007 | MOS Ge Diodes Based on High kappa Gate Dielectrics Grown by MBE and ALD | Lee, Kun Yu; Lee, WC; Lin, TD; Lee, CS; Chang, YC; Lee, YJ; Huang, ML; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG | APS Meeting Abstracts | | | |
2009 | Nano-electronics of high $κ$ dielectrics on InGaAs for key technologies beyond Si CMOS | Lin, TD; Chang, P; Chiu, HC; Chang, YC; Lin, CA; Chang, WH; Lee, YJ; Chang, YH; Huang, ML; Kwo, J; others; MINGHWEI HONG | 2009 IEEE International Conference on Indium Phosphide & Related Materials | | | |
2010 | Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS | Lee, WC; Chang, P; Lee, YJ; Huang, ML; Lin, TD; Chu, LK; Chang, YC; Chiu, HC; Chang, YH; Lin, CA; others; MINGHWEI HONG | 2010 International Symposium on VLSI Technology Systems and Applications | 0 | 0 | |
2011 | Publisher's Note:``Attainment of low interfacial trap density absent of a large midgap peak in In0. 2Ga0. 8As by Ga2O3 (Gd2O3) passivation''[Appl. Phys. Lett. 98, 062108 (2011)] | Lin, CA; Chiu, HC; Chiang, TH; Lin, TD; Chang, YH; Chang, WH; Chang, YC; Wang, W-E; Dekoster, J; Hoffmann, TY; others; MINGHWEI HONG | Applied Physics Letters | | | |
2012 | Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-deposition | Lin, TD; Chang, YH; Lin, CA; Huang, ML; Lee, WC; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2009 | Self-aligned inversion channel In 0.53 Ga 0.47 As n-MOSFETs with ALD-Al 2 O 3 and MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Chiu, HC; Lin, TD; Chang, P; Lee, WC; Chiang, CH; Kwo, J; Lin, YS; Hsu, Shawn SH; Tsai, W; Hong, M; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
2008 | Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric | Chen, CP; Lin, TD; Lee, YJ; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG | Solid-State Electronics | | | |
2008 | Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2 O 3/Ga 2 O 3 (Gd 2 O 3 as gate dielectrics | Lin, TD; Chen, Christine P; Chiu, HC; Chang, Peter; Lin, CA; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG | Device Research Conference, 2008 | | | |
2010 | Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Chang, YH; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG | Solid-State Electronics | | | |
2009 | Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Chang, YH; Lin, CA; Chang, WH; Kwo, J; Tsai, W; Hong, M; MINGHWEI HONG | Proceedings of the European Solid State Device Research Conference, 2009 | | | |
2015 | Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high $κ$ gate dielectric using a CMOS compatible process | Fu, CH; Lin, YH; Lee, WC; Lin, TD; Chu, RL; Chu, LK; Chang, P; Chen, MH; Hsueh, WJ; Chen, SH; others; MINGHWEI HONG | Microelectronic Engineering | | | |
2014 | Semiconductor-insulator Interfaces, High $κ$ Dielectrics on (In) GaAs | Pi, TW; Lin, TD; Chang, WH; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG | Wiley Encyclopedia of Electrical and Electronics Engineering | | | |
2013 | Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition | Pi, TW; Lin, HY; Chiang, TH; Liu, YT; Chang, YC; Lin, TD; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG | Applied Surface Science | 19 | 19 | |