公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2007 | Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs MOSFET with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric | Chen, Chih-Ping; Lin, Tsung-Da; Chang, Yao-Chung; MINGHWEI HONG ; Kwo, J Raynien | 2007 International Semiconductor Device Research Symposium | | | |
2011 | Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics | Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; MINGHWEI HONG ; Kwo, Jueinai | Applied Physics Express | | | |
2013 | Surface Passivation of GaSb (100) Using Molecular Beam Epitaxy of Y2O3 and Atomic Layer Deposition of Al2O3: A Comparative Study | Chu, Rei-Lin; Hsueh, Wei-Jen; Chiang, Tsung-Hung; Lee, Wei-Chin; Lin, Hsiao-Yu; Lin, Tsung-Da; Brown, Gail J; Chyi, Jen-Inn; Huang, Tsung-Shiew; Pi, Tun-Wen; MINGHWEI HONG ; others | Applied Physics Express | | | |