公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing | Chen, P.S.; Lee, S.W.; Lee, M.H.; Liu, C.W. | Applied Surface Science | | | |
2008 | Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor | Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO | Applied Physics Letters | 13 | 11 | |
2014 | Gate-all-around Ge FETs | CHEE-WEE LIU ; Liu, C.W.; Chen, Y.-T.; Hsu, S.-H.; CHEE-WEE LIU | ECS Transactions | | | |
2014 | Ge gate-all-around FETs on Si | CHEE-WEE LIU ; Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Tu, W.-H.; Huang, S.-H.; Hsu, S.-H.; CHEE-WEE LIU | Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 | | | |
2004 | Ge Outdiffusion Effect on Flicker Noise
in Strained-Si nMOSFETs | Hua, W.C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M. | IEEE ELECTRON DEVICE LETTERS | | | |
2004 | Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs | CHEE-WEE LIU ; Hua, W.-C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
1994 | Growth and band gap of strained 〈110〉 Si<inf>1-x</inf>Ge <inf>x</inf> layers on silicon substrates by chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Perovic, D.D.; CHEE-WEE LIU | Applied Physics Letters | | | |
1997 | Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Venkataraman, V.; CHEE-WEE LIU | Materials Chemistry and Physics | | | |
1997 | Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition | Liu, C.W.; Venkataraman, V.; LiuCW | Materials Chemistry and Physics | | | |
1997 | Growth and electron effective mass measurements of strained Si and Si<inf>0.94</inf>Ge<inf>0.06</inf> on relaxed Si<inf>0.62</inf>Ge<inf>0.38</inf> buffers grown by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Venkataraman, V.; CHEE-WEE LIU | Materials Chemistry and Physics | | | |
1996 | Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates | CHEE-WEE LIU ; Liu, C.W.; St. Amour, A.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Magee, C.W.; Eaglesham, D.; CHEE-WEE LIU | Journal of Applied Physics | | | |
1994 | Growth and photoluminescence of strained 〈 110 〉 Si/Si<inf>1-x</inf>Ge<inf>x</inf>/Si quantum wells grown by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Perovic, D.D.; CHEE-WEE LIU | Materials Research Society Symposium | | | |
2004 | The growth of high-quality SiGe films with an intermediate Si layer | CHEE-WEE LIU ; Lee, S.W.; Chen, P.S.; Tsai, M.-J.; Chia, C.T.; Liu, C.W.; Chen, L.J.; CHEE-WEE LIU | Thin Solid Films | | | |
1997 | Growth of β-SiC on Si and poly-Si on β-SiC by rapid thermal chemical vapor deposition | CHEE-WEE LIU ; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Materials Research Society Symposium | | | |
2010 | Hexagonal SiGe quantum dots and nanorings on Si(110) | CHEE-WEE LIU ; Lee, C.-H.; Liu, C.W.; Chang, H.-T.; Lee, S.W.; CHEE-WEE LIU | Journal of Applied Physics | | | |
2003 | A High Efficient 820 nm MOS Ge Quantum Dot Photodetector | Hsu, B.-C.; Chang, S.T.; Chen, T.-C.; Kuo, P.-S.; Chen, P.S.; Pei, Z.; Liu, C.W. | IEEE Electron Device Letters | | | |
2002 | High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity | Hsu, B.C.; Chang, S.T.; Shie, C.R.; Lai, C.C.; Chen, P.S.; Liu, C.W. | Electron Devices Meeting, 2002. IEDM '02. Digest. International | 0 | 0 | |
1996 | High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques | CHEE-WEE LIU ; Madhavi, S.; Venkataraman, V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Annual Device Research Conference Digest | | | |
2003 | A High-Performance SiGe-Si Multiple-Quantum-Well Heterojunction Phototransistor | Pei, Zingway; Liang, C.S.; Lai, L.S.; Tseng, Y.T.; Hsu, Y.M.; Chen, P.S.; Lu, S.C.; Tsai, M.-J.; Liu, C.W. | IEEE Electron Device Letters | | | |
2006 | Hole confinement at Si/SiGe heterojunction
of strained-Si N and PMOS devices | Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. | Solid-State Electronics | | | |