| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2015 | Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well | Melnikov, M.Yu.; Shashkin, A.A.; Dolgopolov, V.T.; Huang, S.-H.; Liu, C.W.; Kravchenko, S.V.; CHEE-WEE LIU | Applied Physics Letters | | | |
| 2005 | Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si <inf>1-x-y</inf> Ge <inf>x</inf> C <inf>y</inf> thin films on Si(0 0 1) with ethylene (C <inf>2</inf> H <inf>4</inf> ) precursor as carbon source | Chen, P.S.; Lee, S.W.; Liu, Y.H.; Lee, M.H.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU | Materials Science in Semiconductor Processing | | | |
| 2011 | Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors | Lu, T.M.; Lee, C.-H.; Huang, S.-H.; Tsui, D.C.; Liu, C.W.; CHEE-WEE LIU | Applied Physics Letters | | | |
| 1998 | Valence band properties of relaxed Ge1-xCx alloys | Lin, C.Y.; Liu, C.W.; Lee, L.J.; CHEE-WEE LIU | Materials Chemistry and Physics | | | |
| 1998 | Valence band properties of relaxed Ge1?xCx alloys | Lin, C.Y.; Liu, C.W.; Lee, L.J. | Materials Chemistry and Physics | | |  |
| 1998 | Valence band properties of relaxed Ge<inf>1-x</inf>C<inf>x</inf> alloys | Lin, C.Y.; Liu, C.W.; Lee, L.J.; CHEE-WEE LIU | Materials Chemistry and Physics | | | |
| 2001 | Visible and band edge electroluminescence from indium tin oxide/SiO <inf>2</inf>/Si metal-oxide-semiconductor structures | Chen, M.-J.; Lin, C.-F.; Liu, W.T.; Chang, S.T.; Liu, C.W.; CHING-FUH LIN ; CHEE-WEE LIU | Journal of Applied Physics | | | |
| 2001 | Visible and band edge electroluminescence from indium tin oxide/SiO<inf>2</inf>/Si metal-oxide-semiconductor structures | Chen, M.-J.; Lin, C.-F.; Liu, W.T.; Chang, S.T.; Liu, C.W.; MIIN-JANG CHEN | Journal of Applied Physics | | | |
| 2005 | Visible photoluminescence from Ge quantum dots | Sun, K.W.; Sue, S.H.; Liu, C.W. | Physica E: Low-dimensional Systems and Nanostructures | | | |
| 2005 | Visible photoluminescence from Ge quantum dots | Sun, K.W.; Sue, S.H.; Liu, C.W.; CHEE-WEE LIU | Physica E: Low-Dimensional Systems and Nanostructures | | | |
| 2011 | Voltage linearity improvement of HfO<inf>2</inf>-based metal-insulator- metal capacitors with H<inf>2</inf> O prepulse treatment | Lin, C.-M.; Chen, Y.-T.; Lee, C.-H.; Chang, H.-C.; Chang, W.-C.; Chang, H.-L.; Liu, C.W.; CHEE-WEE LIU | Journal of the Electrochemical Society | | | |
| 2006 | δ-Doped MOS Ge/Si quantum dot/well infrared photodetector | Lin, C.-H.; Yu, C.-Y.; Kuo, P.-S.; Chang, C.-C.; Guo, T.-H.; Liu, C.W. | Thin Solid Films | | | |
| 2006 | δ-Doped MOS Ge/Si quantum dot/well infrared photodetector | Lin, C.-H.; Yu, C.-Y.; Kuo, P.-S.; Chang, C.-C.; Guo, T.-H.; Liu, C.W.; CHEE-WEE LIU | Thin Solid Films | | | |
| 2006 | 失業真的會導致犯罪嗎?以臺灣1978年至2003年縣市資料為例 | 林明仁; 劉仲偉; Lin, M.J.; Liu, C.W. | 經濟論文叢刊 | | | |
| 2008 | 面對中華思想：中?嶺雄解析現代中國 | 劉智瑋; Liu, C.W. | 國家發展研究 | | | |
