| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 1992 | A flexible robot inspection cell based on vision image | Lee, K.C.; Huang, H.P.; Lu, S.S. | Intl. J. of Computer Integrated Manufacturing | | | |
| 2001 | Formation of submicron T-gate by rapid thermally reflowed resist with metal transfer layer | Meng, C.C.; Liao, G.R.; Lu, S.S.; SHEY-SHI LU | Electronics Letters | 16 | 14 | |
| 2000 | Fully monolithic integrated twin dipole antenna mixer on a GaAs substrate | Deng, K.L.; Meng, C.C.; Lu, S.S.; Lee, H.D.; Wang, H.; SHEY-SHI LU | Asia-Pacific Microwave Conference, APMC | | | |
| 2000 | A fully monolithic integrated twin dipole antenna mixer on a GaAs substrate | Deng, K.L.; Meng, C.C.; Lu, S.S.; Lee, H.D.; Wang, H. | Microwave Conference, 2000 Asia-Pacific | 0 | 0 |  |
| 1999 | Fundamental geometry analysis of wire electrical discharge machining in corner cutting | Hsue, W.J.; Liao, Y.S.; Lu, S.S.; YUNN-SHIUAN LIAO | International Journal of Machine Tools and Manufacture | 46 | 38 | |
| 1999 | Fundamental Geometry Analysis of Wire Electrical Discharge Machining in Corner Cutting | Hsue, W.J.; Liao, Y.S.; Lu, S.S. | International Journal of Machine Tools and Manufacture | | | |
| 1994 | A fuzzy cell mapping method for a time sub-optimal control implementation | Yen, J.Y.; Chao, W.C.; Lu, S.S. | IFAC Journal of Control Engineering Practice | | | |
| 1992 | GSMBE grown (GaIn)P/GaAs heterojunction bipolar transistors exhibiting current gains up to 590 | Lu, S.S.; Huang, C.C.; SHEY-SHI LU | Electronics Letters | | | |
| 1995 | High-breakdown-voltage Ga0.51In0.49P/GaAs I-HEMT and I2HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy | Sun, T.P.; Huang, C.L.; Lu, S.S.; Lu, S.S. | Solid State Electronics | 17 | 16 | |
| 1992 | High-Current-Gain Ga0.51In0.49P/GaAs Heterojunction Bipolar Transistor Grown by Gas-Source Molecular Beam Epitaxy | Lu, S.S.; Huang, C.C.; SHEY-SHI LU | IEEE Electron Device Letters | 69 | 60 | |
| 1992 | High-Current-Gain Small-Offset-Voltage In0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistors Grown by Gas Source Molecular Beam Epitaxy | Lu, S.S.; Wu, C.C.; SHEY-SHI LU | IEEE Electron Device Letters | 18 | 16 | |
| 1992 | High-performance In0.49Ga0.51P/GaAs tunneling emitter bipolar transistor grown by gas source molecular beam epitaxy | Wu, C.C.; Lu, S.S.; Lee, S.C.; Williamson, F.; Nathan, M.I.; SHEY-SHI LU | Conference on Solid State Devices and Materials | | | |
| 2006 | Magnetic Resonance Imaging Using Standard CMOS RF Coil | Wu, E.L.; Wang, T.; Chen, J.H.; Lu, S.S. | | | | |
| 2004 | Monolithic InGaP-GaAs HBT receiver
front-end with 6mW DC power
consumption for 5 GHz band WLAN
applications | Yeh, K.Y.; Lu, S.S.; Lin, Y.S. | | | | |
| 2007 | Performance enhancement of the nMOSFET low-noise amplifier by package strain | Hua, W.-C.; Chang, H.-L.; Wang, T.; Lin, C.-Y.; Lin, C.-P.; Lu, S.S.; Meng, C.C.; Liu, C.W.; SHEY-SHI LU ; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 1 | 1 | |
| 1994 | Piezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/Al0.35Ga0.65As/In0.2Ga0.8A s/GaAs strained layer structure on (111)B GaAs substrate | Lu, S.S.; Huang, C.L.; LuSS | Electronics Letters | | | |
| 1999 | Piezoresistive response induced by piezoelectric charges in n-type GaAs mesa resistors for application in stress transducers | Hsu, Y.W.; Lu, S.S.; SHEY-SHI LU ; PEI-ZEN CHANG | Journal of Applied Physics | 10 | 9 | |
| 1994 | Robotic Deburring with a Hybrid-Compliance End-Effector | Shih, C.A.; Lu, S.S.; Huang, H.P. | J. of the Chinese Institute of Engineers | | | |
| 1992 | Small Offset-Voltage In0.49Ga0.51P/GaAs Double-Barrier Bipolar Transistor | Wu, C.C.; Lu, S.S.; SHEY-SHI LU | IEEE Electron Device Letters | 33 | 28 | |
| 1997 | Stability of PDF Controller with a Stick-Slip Friction Drive Device | Yen, J.Y.; Huang, C.J.; Lu, S.S.; YenJY | ASMS Transactions on Dynamic Systems | | | |
