公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2007 | HfO2/HfAlO/HfO2 nanolaminate charge trapping layers for high-performance nonvolatile memory device applications | Maikap, S.; Tzeng, P. J.; Wang, T. Y.; Lee, H. Y.; Lin, C. H.; Wang,? C. C.; Lee, L. S.; Yang, J. R.; Tsai, M. J. | Japanese Journal of Applied | | | |
2007 | HfO<inf>2</inf>/HfAlO/HfO<inf>2</inf> nanolaminate charge trapping layers for high-performance nonvolatile memory device applications | Maikap, S.; Tzeng, P.-J.; Wang, T.-Y.; Lee, H.-Y.; Lin, C.-H.; Wang, C.-C.; Lee, L.-S.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | | | |
2007 | High-�e HfO<inf>2</inf>/TiO<inf>2</inf>/HfO<inf>2</inf> multilayer quantum well flash memory devices | Maikap, S.; Tzeng, P.J.; Tseng, S.S.; Wang, T.-Y.; Lin, C.H.; Lee, H.Y.; Wang, C.C.; Tien, T.C.; Lee, L.S.; Li, P.W.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | | | |
2016 | Highly reliable label-free detection of urea/glucose and sensing mechanism using SiO<inf>2</inf> and CdSe-ZnS nanoparticles in electrolyte-insulator-semiconductor structure | Kumar, P.; Maikap, S.; Singh, K.; Chatterjee, S.; Chen, Y.-Y.; Cheng, H.-M.; Mahapatra, R.; Qiu, J.-T.; Yang, J.-R.; JER-REN YANG | Journal of the Electrochemical Society | | | |
2008 | Highly thermally stable and reproducible of ALD RuO<inf>2</inf> nanocrystal floating gate memory devices with large memory window and good retention | Maikap, S.; Banerjee, W.; Tzeng, P.-J.; Wang, T.-Y.; Lin, C.H.; Tien, T.C.; Lee, L.S.; Yang, J.-R.; Kao, M.-J.; Tsai, M.-J.; JER-REN YANG | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | | | |
2006 | Hole confinement at Si/SiGe heterojunction
of strained-Si N and PMOS devices | Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. | Solid-State Electronics | | | |
2006 | Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices | Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W.; CHEE-WEE LIU | Solid-State Electronics | 14 | 14 | |
2006 | Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices | Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. | Solid-State Electronics | | | |
2007 | Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si | Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M. H.; Maikap, S.; Hsu, C.-H.; Liu, C. W. | Applied Physics Letters | | | |
2007 | Hole mobility enhancement of Si<inf>0.2</inf>Ge<inf>0.8</inf> quantum well channel on Si | Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M.H.; Maikap, S.; Hsu, C.-H.; Liu, C.W.; CHEE-WEE LIU | Applied Physics Letters | 27 | 27 | |
2014 | Impact of AlO<inf>x</inf> interfacial layer and switching mechanism in W/AlO<inf>x</inf>/TaO<inf>x</inf>/TiN RRAMs | Chakrabarti, S.; Jana, D.; Dutta, M.; Maikap, S.; Chen, Y.-Y.; Yang, J.-R.; JER-REN YANG | 2014 IEEE 6th International Memory Workshop, IMW 2014 | | | |
2015 | Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu:AlO<inf>x</inf>/TaO<inf>x</inf>/TiN structure | Roy, S.; Maikap, S.; Sreekanth, G.; Dutta, M.; Jana, D.; Chen, Y.Y.; Yang, J.R.; JER-REN YANG | Journal of Alloys and Compounds | | | |
2014 | Low current cross-point memory using gadolinium-oxide switching material | Jana, D.; Maikap, S.; Chen, Y.Y.; Yang, J.R.; JER-REN YANG | Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 | | | |
2008 | Low voltage operation of high-�e HfO<inf>2</inf>/TiO <inf>2</inf>/Al<inf>2</inf>O<inf>3</inf> single quantum well for nanoscale flash memory device applications | Maikap, S.; Wang, T.-Y.; Tzeng, P.-J.; Lee, H.-Y.; Lin, C.-H.; Wang, C.-C.; Lee, L.-S.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Japanese Journal of Applied Physics | | | |
2005 | MBE-grown high 庥 gate dielectrics of HfO <inf>2</inf> and (Hf-Al)O <inf>2</inf> for Si and III-V semiconductors nano-electronics | Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | | 0 | |
2004 | Mechanically strained Si-SiGe HBTs | Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 15 | 12 | |
2004 | Mechanically strained Si/SiGe HBTs | Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; Liu, C.W. | IEEE Electron Device Letters | | | |
2004 | Mechanically strained strained-Si NMOSFETs | Maikap, S.; Yu, C.-Y.; Jan, S.-R.; Lee, M.H.; Liu, C.W. | IEEE Electron Device Letters | | | |
2004 | Mechanically Strained Strained-Si NMOSFETs | Maikap, S.; Yu, C.-Y.; Jan, S.-R.; Lee, M.H.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 24 | 21 | |
2008 | Memory characteristics of atomic-layer-deposited high- �e HfAlO nanocrystal capacitors | Maikap, S.; Tzeng, P.-J.; Wang, T.-Y.; Lin, C.H.; Lee, L.S.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Electrochemical and Solid-State Letters | | | |