公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2004 | Package-strain-enhanced device and circuit performance | Maikap, S.; MING-HAN LIAO ; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 21 | 0 | |
2009 | Physical and memory characteristics of atomic-layer-deposited high-�e hafnium-aluminum-oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate | Das, A.; Maikap, S.; Li, W.-C.; Chang, L.-B.; Yang, J.-R.; JER-REN YANG | Japanese Journal of Applied Physics | | | |
2004 | Post deposition annealing effects on the reliability of ALD HfO<inf>2</inf> films on strained-Si<inf>0.8</inf>Ge<inf>0.2</inf> layers | Tzeng, P.J.; Maikap, S.; Lai, W.Z.; Liang, C.S.; Chen, P.S.; Lee, L.S.; Liu, C.W.; CHEE-WEE LIU | International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | | | |
2005 | Recent Progress in Mobility-enhancement Technologies | Liu, C. W.; Maikap, S.; Yu, C.-Y. | | | | |
2006 | The interface properties of SiO<inf>2</inf>/strained-si with carbon incorporation surface channel MOSFETs | Lee, M.H.; Chang, S.T.; Maikap, S.; Yu, C.-Y.; Liu, C.W.; CHEE-WEE LIU | Third International SiGe Technology and Device Meeting, ISTDM 2006 | | | |
2012 | Unipolar resistive switching memory characteristics using IrO<inf>x</inf>/Al<inf>2</inf>O<inf>3</inf>/SiO<inf>2</inf>/p-Si MIS structure | Banerjee, W.; Maikap, S.; Chen, Y.-Y.; Yang, J.R.; JER-REN YANG | ECS Transactions | | | |