公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2000 | High 庰 gate dielectrics Gd<inf>2</inf>O<inf>3</inf>and Y<inf>2</inf>O<inf>3</inf>for silicon | Kwo, J.; MINGHWEI HONG ; Kortan, A.R.; Queeney, K.T.; Chabal, Y.J.; Mannaerts, J.P.; Boone, T.; Krajewski, J.J.; Sergent, A.M.; Rosamilia, J.M. | Applied Physics Letters | | | |
2005 | High-quality thin single-crystal 帠-Al <inf>2</inf> O <inf>3</inf> films grown on Si (111) | Wu, S.Y.; MINGHWEI HONG ; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Lee, W.C.; Huang, Y.L. | Applied Physics Letters | | | |
2002 | Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectric | Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; MINGHWEI HONG ; Ng, K.; Bude, J. | 2002 12th International Conference on Molecular Beam Epitaxy | | | |
- | Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectric | Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; MINGHWEI HONG ; Ng, K.; Bude, J. | Journal of Crystal Growth | | | |
2000 | Initial growth of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) on GaAs: Key to the attainment of a low interfacial density of states | MINGHWEI HONG ; Lu, Z.H.; Kwo, J.; Kortan, A.R.; Mannaerts, J.P.; Krajewski, J.J.; Hsieh, K.C.; Chou, L.J.; Cheng, K.Y. | Applied Physics Letters | | | |
1998 | Insulator passivation of Ino <inf>0.2</inf>Ga <inf>0.8</inf>As-GaAs surface quantum wells | Passlack, M.; MINGHWEI HONG ; Harris, T.D.; Mannaerts, J.P.; Vakhshoori, D.; Schnoes, M.L. | IEEE Journal of Quantum Electronics | | | |
2005 | MBE-grown high 庥 gate dielectrics of HfO <inf>2</inf> and (Hf-Al)O <inf>2</inf> for Si and III-V semiconductors nano-electronics | Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; MINGHWEI HONG ; Kwo, J. | Journal of Crystal Growth | | | |
2001 | New phase formation of Gd<inf>2</inf>O<inf>3</inf>films on GaAs(100) | Kortan, A.R.; MINGHWEI HONG ; Kwo, J.; Mannaerts, J.P.; Krajewski, J.J.; Kopylov, N.; Steiner, C.; Bolliger, B.; Erbudak, M. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
1997 | Novel Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) passivation techniques to produce low D <inf>it</inf> oxide-GaAs interfaces | MINGHWEI HONG ; Mannaerts, J.P.; Bower, J.E.; Kwo, J.; Passlack, M.; Hwang, W.-Y.; Tu, L.W. | Journal of Crystal Growth | | | |
1996 | Observation of inversion layers at GA<inf>2</inf>O<inf>3</inf>-GaAs interfaces fabricated by in-situ molecular-beam epitaxy | Passlack, M.; MINGHWEI HONG ; Mannaerts, J.P. | Electronics Letters | | | |
1999 | Passivation of GaAs using (Ga<inf>2</inf>O<inf>3</inf>)<inf>1 - x</inf>(Gd<inf>2</inf>O<inf>3</inf>)<inf>x</inf>, 0?x?1.0 films | Kwo, J.; Murphy, D.W.; MINGHWEI HONG ; Opila, R.L.; Mannaerts, J.P.; Sergent, A.M.; Masaitis, R.L. | Applied Physics Letters | | | |
2001 | Probing the microscopic compositions at Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaAs interface by core level photoelectron spectroscopy | Lay, T.S.; Huang, K.H.; Hung, W.H.; MINGHWEI HONG ; Kwo, J.; Mannaerts, J.P. | Solid-State Electronics | | | |
2000 | Properties of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN metal-insulator-semiconductor diodes | MINGHWEI HONG ; Anselm, K.A.; Kwo, J.; Ng, H.M.; Baillargeon, J.N.; Kortan, A.R.; Mannaerts, J.P.; Cho, A.Y.; Lee, C.M.; Chyi, J.I.; Lay, T.S. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2001 | Properties of high 庥 gate dielectrics Gd<inf>2</inf>O<inf>3</inf> and Y<inf>2</inf>O<inf>3</inf> for Si | Kwo, J.; MINGHWEI HONG ; Kortan, A.R.; Queeney, K.L.; Chabal, Y.J.; Opila, R.L.; Muller, D.A.; Chu, S.N.G.; Sapjeta, B.J.; Lay, T.S.; Mannaerts, J.P.; Boone, T.; Krautter, H.W.; Krajewski, J.J.; Sergnt, A.M.; Rosamilia, J.M. | Journal of Applied Physics | | | |
1996 | Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy | Passlack, M.; MINGHWEI HONG ; Mannaerts, J.P. | Applied Physics Letters | | | |
2003 | Rapid post-metallization annealing effects on high-k Y<inf>2</inf>O<inf>3</inf>/Si capacitor | Lay, T.S.; Liao, Y.Y.; Liu, W.D.; Lai, Y.H.; Hung, W.H.; Kwo, J.; MINGHWEI HONG ; Mannaerts, J.P. | Solid-State Electronics | | | |
2002 | Single-crystal GaN/Gd<inf>2</inf>O<inf>3</inf>/GaN heterostructure | MINGHWEI HONG ; Kwo, J.; Chu, S.N.G.; Mannaerts, J.P.; Kortan, A.R.; Ng, H.M.; Cho, A.Y.; Anselm, K.A.; Lee, C.M.; Chyi, J.I. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2000 | Structural modifications of the Gd<inf>2</inf>O<inf>3</inf>(110) films on GaAs(100) | Steiner, C.; Bolliger, B.; Erbudak, M.; MINGHWEI HONG ; Kortan, A.R.; Kwo, J.; Mannaerts, J.P. | Physical Review B - Condensed Matter and Materials Physics | | | |
2000 | Structure of epitaxial Gd<inf>2</inf>O<inf>3</inf> films and their registry on GaAs(100) substrates | Bolliger, B.; Erbudak, M.; MINGHWEI HONG ; Kwo, J.; Kortan, A.R.; Mannaerts, J.P. | Surface and Interface Analysis | | | |
2006 | Structure of Sc <inf>2</inf>O <inf>3</inf> films epitaxially grown on 帢-Al <inf>2</inf>O <inf>3</inf> (0001) | Kortan, A.R.; Kopylov, N.; Kwo, J.; MINGHWEI HONG ; Chen, C.P.; Mannaerts, J.P.; Liou, S.H. | Applied Physics Letters | | | |