公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2000 | New High $ɛ$ Gate Dielectrics Gd_2O3 and Y_2O3 for Si | Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal, YJ; Lay, TS; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; others; MINGHWEI HONG | APS Meeting Abstracts | | | |
2001 | New phase formation of Gd2O3 films on GaAs (100) | Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1997 | Novel Ga 2 O 3 (Ga 2 O 3) passivation techniques to produce low D it oxide-GaAs interfaces | Hong, M; Mannaerts, JP; Bower, JE; Kwo, J; Passlack, M; Hwang, W-Y; Tu, LW; MINGHWEI HONG | Journal of Crystal Growth | | | |
1996 | Observation of inversion layers at Ga 2 O 3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy | Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG | Electronics Letters | | | |
2002 | Optical properties of gallium oxide thin films | Rebien, M; Henrion, W; Hong, M; Mannaerts, JP; Fleischer, M; MINGHWEI HONG | Applied Physics Letters | 215 | 208 | |
2003 | Optimization of AuGe-Ni-Au ohmic contacts for GaAs MOSFETs | Lin, Hung-Cheng; Senanayake, Sidat; Cheng, Keh-Yung; Hong, Minghwei; Kwo, J Raynien; Yang, Bin; Mannaerts, JP; MINGHWEI HONG | IEEE Transactions on Electron Devices | 31 | 30 | |
1998 | Oxide-GaAs interfacial electronic properties characterized by modulation spectroscopy of photoreflectance | Hwang, JS; Wang, YC; Chou, WY; Tyan, SL; Hong, M; Mannaerts, JP; Kwo, J; others; MINGHWEI HONG | Journal of Applied Physics | 6 | 6 | |
1999 | Papers from the 17th North American Conference on Molecular Beam Epitaxy-Growth of Novel Materials and Structures-Passivation of GaAs using gallium-gadolinium oxides | Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
2000 | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes | Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
2000 | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions | Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
1999 | Passivation of GaAs using gallium-gadolinium oxides | Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1999 | Passivation of GaAs using „Ga2O3…„Gd2O3… x, 0 x 1.0 films | Kwo, J; Murphy, DW; Hong, M; Opila, RL; Mannaerts, JP; Sergent, AM; Masaitis, RL; MINGHWEI HONG | Applied Physics Letters | | | |
1992 | Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy | Hong, M; Chen, YK; Wu, MC; V; enberg, JM; Chu, SNG; Mannaerts, JP; Chin, MA; MINGHWEI HONG | Applied Physics Letters | | | |
2001 | Probing the microscopic compositions at Ga 2 O 3 (Gd 2 O 3)/GaAs interface by core level photoelectron spectroscopy | Lay, TS; Huang, KH; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Solid-State Electronics | | | |
2000 | Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes | Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2001 | Properties of High kappa Gate Dielectrics Gd_2O_3, Y_2O_3, and yttria stabilized ZrO2 for Si | Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal Opila Jr, YJ; Muller, DA; Chu, SNG; Sapjeta, BJ; Mannaerts, JP; Boone, T; others; MINGHWEI HONG | APS Meeting Abstracts | | | |
1996 | Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by insitu molecular beam epitaxy | Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG | Applied Physics Letters | | | |
2000 | RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Structural modifications of the Gd2O3 (110) films on GaAs (100) | Steiner, C; Bolliger, B; Erbudak, M; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Physical Review-Section B-Condensed Matter | | | |
2003 | Rapid post-metallization annealing effects on high-k Y 2 O 3/Si capacitor | Lay, TS; Liao, YY; Liu, WD; Lai, YH; Hung, Wei-Hsiu; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG | Solid-State Electronics | | | |
1996 | Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy | Passlack, M; Hong, M; Mannaerts, JP; Kwo, JR; Tu, LW; MINGHWEI HONG | Applied Physics Letters | 60 | 63 | |