公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1997 | Low D it, thermodynamically stable Ga 2 O 3-GaAs interfaces: fabrication, characterization, and modeling | Passlack, M; MINGHWEI HONG ; Mannaerts, JP; Opila, RL; Chu, SNG; Moriya, N; Ren, F; Kwo, JR | IEEE Transactions on Electron Devices | | | |
1999 | Papers from the 17th North American Conference on Molecular Beam Epitaxy-Growth of Novel Materials and Structures-Passivation of GaAs using gallium-gadolinium oxides | Kwo, J; Murphy, DW; MINGHWEI HONG ; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
1999 | Passivation of GaAs using gallium-gadolinium oxides | Kwo, J; Murphy, DW; MINGHWEI HONG ; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM | Journal of Vacuum Science & Technology B | | | |
1999 | Passivation of GaAs using „Ga2O3…„Gd2O3… x, 0 x 1.0 films | Kwo, J; Murphy, DW; MINGHWEI HONG ; Opila, RL; Mannaerts, JP; Sergent, AM; Masaitis, RL | Applied Physics Letters | | | |
2001 | Properties of high k gate dielectrics Gd2O3 and Y2O3 for Si | Kwo, J; MINGHWEI HONG ; Kortan, AR; Queeney, KL; Chabal, YJ; Opila, RL; Muller, DA; Chu, SNG; Sapjeta, BJ; Lay, TS; others | Journal of Applied Physics | | | |