公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2001 | Modeling of Single-Transistor Latch Behavior in Partially-Depleted (PD) SOI CMOS Devices Using a Concise SOI-SPICE Model | J. B. Kuo; S. C. Lin; JAMES-B KUO | International Conference on Semiconductor IC Technology (ICSICT) | 1 | 0 | |
2003 | Modeling the Fringing Electric Field Effect on the Threshold Voltage of FD SOI NMOS Devices with the LDD/Sidewall Oxide Spacer Structure | S. C. Lin; J. B. Kuo; JAMES-B KUO | IEEE Transactions on Electron Devices | 74 | 64 | |
2004 | PD SOI-Technology SPICE Models | J. B. Kuo; S. C. Lin; JAMES-B KUO | Wiley's Texbook by J. B. Kuo: SOI CMOS VLSI Devices | 0 | 0 | |
2013 | Strategies to Tailor Discharge Behavior of Solution Plasma via Different Power Types | H. W. Chang; S. C. Lin; C. Y. Chou; F. H. Huang,; C. C. Hsu | ||||
2002 | The Fringing Electric Field Effect on the Short-Channel Effect Threshold Voltage of FD SOI NMOS Devices with LDD/Sidewall Oxide Spacer Structure | J. B. Kuo; S. C. Lin; JAMES-B KUO | Hong Kong Electron Devices Meeting | 2 | 0 |