公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2019 | Simulation Model of Oxide-Aperture Strain Quantum Well VCSEL | Shih, H.-Y.; Wu, C.-H. | 2019 IEEE Photonics Conference, IPC 2019 - Proceedings | | | |
2015 | Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs | Shih, H.-Y.; Shiojiri, M.; Chen, C.-H.; Yu, S.-F.; Ko, C.-T.; Yang, J.-R.; Lin, R.-M.; JER-REN YANG ; MIIN-JANG CHEN | Scientific Reports | 53 | 45 | |
2015 | Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition | Shih, H.-Y.; Lin, M.-C.; Chen, L.-Y.; Chen, M.-J.; MIIN-JANG CHEN | Nanotechnology | | | |